IRFR7446PbF
2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback January 6, 2015
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 56A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.08mH
R
G
= 50Ω, I
AS
= 56A, V
GS
=10V.
I
SD
≤ 100A, di/dt ≤ 1306A/μs, V
DD
≤ V
(BR)DSS
, T
J
≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
R
θ
is measured at T
J
approximately 90°C.
Limited by T
Jmax
starting
T
J
= 25°C, L= 1mH, R
G
= 50Ω, I
AS
= 22A, V
GS
=10V.
* L
D
and L
S
are Internal Drain Inductance and Internal Source Inductance
Static @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 40 ––– ––– V
ΔV
(BR)DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient ––– 26 ––– mV/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 3.0 3.9 mΩ
4.4 ––– m
Ω
V
GS(th)
Gate Threshold Voltage 2.2 3.0 3.9 V
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0 μA
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
R
G
Internal Gate Resistance ––– 1.5 ––– Ω
V
GS
= 20V
V
GS
= -20V
V
GS
= 6.0V, I
D
= 28A
V
DS
= V
GS
, I
D
= 100μA
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 56A
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
Absolute Maximum Ratings
Symbol Parameter Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C Maximum Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS (Thermally limited)
Single Pulse Avalanche Energy
I
AR
Avalanche Current A
E
AR
Repetitive Avalanche Energy mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case ––– 1.52
R
θJA
––– 50
R
θJA
Junction-to-Ambient ––– 110
251
± 20
0.66
Max.
120
84
520
56
mJ
-55 to + 175
See Fig 15,16, 23a, 23b
Junction-to-Ambient (PCB Mount)
A
°C
300
98
125
°C/W
