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IRFR7446PBF

P1-P3P4-P6P7-P9P10-P11
IRFR7446PbF
7 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback January 6, 2015
Fig. 18 - Typical Recovery Current vs. di
f
/dt
Fig 17. Threshold Voltage vs. Temperature
Fig. 20 - Typical Stored Charge vs. di
f
/dtFig. 19 - Typical Recovery Current vs. di
f
/dt
Fig. 21 - Typical Stored Charge vs. di
f
/dt
-75 -50 -25 0 25 50 75 100 125 150 175
T
J
, Temperature ( °C )
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
=50μA
I
D
= 250μA
I
D
= 1.0mA
I
D
= 1.0A
0 200 400 600 800 1000
di
F
/dt (A/μs)
0
2
4
6
I
R
R
M
(
A
)
I
F
= 34A
V
R
= 34V
T
J
= 25°C
T
J
= 125°C
0 200 400 600 800 1000
di
F
/dt (A/μs)
0
2
4
6
I
R
R
M
(
A
)
I
F
= 56A
V
R
= 34V
T
J
= 25°C
T
J
= 125°C
0 200 400 600 800 1000
di
F
/dt (A/μs)
0
20
40
60
80
Q
R
R
(
n
C
)
I
F
= 34A
V
R
= 34V
T
J
= 25°C
T
J
= 125°C
0 200 400 600 800 1000
di
F
/dt (A/μs)
0
20
40
60
80
Q
R
R
(
n
C
)
I
F
= 56A
V
R
= 34V
T
J
= 25°C
T
J
= 125°C
IRFR7446PbF
8 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback January 6, 2015
Fig 24a. Switching Time Test Circuit Fig 24b. Switching Time Waveforms
Fig 23b. Unclamped Inductive Waveforms
Fig 23a. Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
V
GS
Fig 25a. Gate Charge Test Circuit
Fig 25b. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2 Qgd Qgodr
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET
®
Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple ≤ 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P. W .
Period
* V
GS
= 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
R
G
V
DD
• dv/dt controlled by R
G
• Driver same type as D.U.T.
• I
SD
controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Inductor Current
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3μF
50KΩ
.2μF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
DS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
V
GS
IRFR7446PbF
9 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback January 6, 2015
D-Pak (TO-252AA) Part Marking Information
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
INTERNATIONAL
ASSEMBLED ON WW 16, 2001
IN THE ASSEMBLY LINE "A"
OR
Note: "P" in assembly line pos ition
EXAMPLE:
LOT CODE 1234
THIS IS AN IRFR120
WI T H AS S E MB LY
i ndi cates "L ead-F ree"
PRODUCT (OPT IONAL )
P = DE S I GNAT E S L E AD-F R E E
A = ASSEMBLY SITE CODE
PART NUMBER
WEEK 16
DAT E CODE
YEAR 1 = 2001
RECTIFIER
INTERNATIONAL
LOGO
LOT CODE
ASSEMBLY
3412
IRFR120
116A
LINE A
34
RECTIFIER
LOGO
IRF R120
12
ASSEMBLY
LOT CODE
YEAR 1 = 2001
DAT E CODE
PART NUMBER
WE E K 16
"P" in assembly line position indicates
"L ead-F r ee" qual ifi cati on to the cons umer-level
P = DE S I GNAT E S L E AD-F R E E
PRODUCT QUALIFIED TO THE
CONSUMER LEVEL (OPTIONAL)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
P1-P3P4-P6P7-P9P10-P11

IRFR7446PBF

Mfr. #:
Buy IRFR7446PBF
Manufacturer:
Infineon Technologies
Description:
Darlington Transistors MOSFET MOSFET N-CH 40V 56A DPAK
Lifecycle:
New from this manufacturer.
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