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IRFR7446PBF

P1-P3P4-P6P7-P9P10-P11
IRFR7446PbF
4 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback January 6, 2015
Fig 3. Typical Output Characteristics
Fig 5. Typical Transfer Characteristics
Fig 6. Normalized On-Resistance vs. Temperature
Fig 4. Typical Output Characteristics
Fig 8. Typical Gate Charge vs. Gate-to-Source VoltageFig 7. Typical Capacitance vs. Drain-to-Source Voltage
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
≤ 60μs PULSE WIDTH
Tj = 25°C
4.3V
VGS
TOP 15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
BOTTOM 4.3V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
≤ 60μs PULSE WIDTH
Tj = 175°C
4.3V
VGS
TOP 15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
BOTTOM 4.3V
2.0 3.0 4.0 5.0 6.0 7.0 8.0
V
GS
, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
V
DS
= 10V
≤
60μs PULSE WIDTH
T
J
= 25°C
T
J
= 175°C
1 10 100
V
DS
, Drain-to-Source Voltage (V)
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0 20 40 60 80 100
Q
G
Total Gate Charge (nC)
0
4
8
12
16
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 32V
V
DS
= 20V
I
D
= 56A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
2.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 56A
V
GS
= 10V
IRFR7446PbF
5 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback January 6, 2015
Fig 10. Maximum Safe Operating Area
Fig 11. Drain-to-Source Breakdown Voltage
Fig 9. Typical Source-Drain Diode
Forward Voltage
Fig 12. Typical C
OSS
Stored Energy
Fig 13. Typical On-Resistance vs. Drain Current
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
SD
, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 175°C
V
GS
= 0V
-60 -40 -20 0 20 40 60 80 100120140160180
T
J
, Temperature ( °C )
40
41
42
43
44
45
46
47
48
49
V
(
B
R
)
D
S
S
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
(
V
)
Id = 1.0mA
0 10 20 30 40
V
DS,
Drain-to-Source Voltage (V)
0.0
0.1
0.2
0.3
0.4
E
n
e
r
g
y
(
μ
J
)
0 20 40 60 80 100 120 140 160 180 200
I
D
, Drain Current (A)
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
Ω
)
V
GS
= 5.5V
V
GS
= 6.0V
V
GS
= 7.0V
VGS = 8.0V
V
GS
=10V
0.1 1 10
V
DS
, Drain-toSource Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
100μsec
DC
L
imited by Package
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
IRFR7446PbF
6 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback January 6, 2015
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 15. Typical Avalanche Current vs.Pulsewidth
Fig 16. Maximum Avalanche Energy vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 23a, 23b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 14, 15).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 14)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) = DT/ Z
thJC
I
av
=
2DT/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
1E-006 1E-005 0.0001 0.001 0.01 0.1
t
1
, Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
°
C
/
W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
25 50 75 100 125 150 175
Starting T
J
, Junction Temperature (°C)
0
20
40
60
80
100
120
140
E
A
R
,
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
TOP Single Pulse
BOTTOM 1.0% Duty Cycle
I
D
= 56A
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.1
1
10
100
A
v
a
l
a
n
c
h
e
C
u
r
r
e
n
t
(
A
)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
ΔΤ
j = 25°C and
Tstart = 150°C.
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Δ
Tj = 150°C and
Tstart =25°C (Single Pulse)
P1-P3P4-P6P7-P9P10-P11

IRFR7446PBF

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Buy IRFR7446PBF
Manufacturer:
Infineon Technologies
Description:
Darlington Transistors MOSFET MOSFET N-CH 40V 56A DPAK
Lifecycle:
New from this manufacturer.
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