Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
1. Product profile
1.1 General description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat
lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
1.4 Quick reference data
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
PMDT670UPE
20 V, 550 mA dual P-channel Trench MOSFET
Rev. 1 — 13 September 2011 Product data sheet
SOT666
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
V
DS
drain-source voltage T
j
=25°C ---20V
V
GS
gate-source voltage -8 - 8 V
I
D
drain current V
GS
=-4.5V; T
amb
=2C
[1]
---550mA
Static characteristics (per transistor)
R
DSon
drain-source on-state
resistance
V
GS
=-4.5V; I
D
= -400 mA; T
j
= 25 °C - 0.67 0.85
PMDT670UPE All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 13 September 2011 2 of 16
NXP Semiconductors
PMDT670UPE
20 V, 550 mA dual P-channel Trench MOSFET
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1S1source TR1
SOT666
2 G1 gate TR1
3D2drain TR2
4S2source TR2
5 G2 gate TR2
6D1drain TR1
123
456
017aaa260
D1
S1
G1
D2
S2
G2
Table 3. Ordering information
Type number Package
Name Description Version
PMDT670UPE - plastic surface-mounted package; 6 leads SOT666
Table 4. Marking codes
Type number Marking code
PMDT670UPE AG
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
V
DS
drain-source voltage T
j
=2C - -20 V
V
GS
gate-source voltage -8 8 V
I
D
drain current V
GS
=-4.5V; T
amb
=2C
[1]
- -550 mA
V
GS
=-4.5V; T
amb
=10C
[1]
- -350 mA
I
DM
peak drain current T
amb
= 25 °C; single pulse; t
p
10 µs - -2.2 A
P
tot
total power dissipation T
amb
=2C
[2]
- 330 mW
[1]
- 390 mW
T
sp
= 25 °C - 1090 mW
Per device
P
tot
total power dissipation T
amb
=2C
[2]
- 500 mW
T
j
junction temperature -55 150 °C
T
amb
ambient temperature -55 150 °C

PMDT670UPE,115

Mfr. #:
Manufacturer:
Nexperia
Description:
MOSFET 20V 550 MA DUAL P-CH TRENCH MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet