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PMDT670UPE,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
PMDT670UPE All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 13 September 2011 3 of 16
NXP Semiconductors
PMDT670UPE
20 V, 550 mA dual P-channel Trench MOSFET
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[3] Measured between all pins.
T
stg
storage temperature -65 150 °C
Source-drain diode
I
S
source current T
amb
=25°C
[1]
- -370 mA
ESD maximum rating
V
ESD
electrostatic discharge voltage HBM
[3]
- 2000 V
Table 5. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Fig 1. Normalized total power dissipation as a
function of junction temperature
Fig 2. Normalized continuous drain current as a
function of junction temperature
PMDT670UPE All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 13 September 2011 4 of 16
NXP Semiconductors
PMDT670UPE
20 V, 550 mA dual P-channel Trench MOSFET
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm
2
.
I
DM
= single pulse
(1) t
p
= 1 ms
(2) t
p
= 10 ms
(3) DC; T
sp
= 25 °C
(4) t
p
= 100 ms
(5) DC; T
amb
= 25 °C; drain mounting pad 1 cm
2
Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
017aaa373
V
DS
(V)
–10
–1
–10
2
–10–1
–1
–10
–1
–10
I
D
(A)
–10
–2
Limit R
DSon
= V
DS
/I
D
(1)
(2)
(3)
(4)
(5)
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per device
R
th(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
- - 250 K/W
Per transistor
R
th(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
- 330 380 K/W
[2]
- 280 320 K/W
R
th(j-sp)
thermal resistance
from junction to solder
point
--115K/W
PMDT670UPE All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 13 September 2011 5 of 16
NXP Semiconductors
PMDT670UPE
20 V, 550 mA dual P-channel Trench MOSFET
FR4 PCB, standard footprint
Fig 4. TR2: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for drain 1 cm
2
Fig 5. TR2: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa064
t
p
(s)
10
−3
10
2
10
3
10110
−2
10
−1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
0
017aaa065
t
p
(s)
10
−3
10
2
10
3
10110
−2
10
−1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
0
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

PMDT670UPE,115

Mfr. #:
Buy PMDT670UPE,115
Manufacturer:
Nexperia
Description:
MOSFET 20V 550 MA DUAL P-CH TRENCH MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
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