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PMDT670UPE,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
PMDT670UPE All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 13 September 2011 6 of 16
NXP Semiconductors
PMDT670UPE
20 V, 550 mA dual P-channel Trench MOSFET
7. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics (per transistor)
V
(BR)DSS
drain-source
breakdown voltage
I
D
=-250µA; V
GS
=0V; T
j
=25°C -20--V
V
GSth
gate-source threshold
voltage
I
D
=-250µA; V
DS
=V
GS
; T
j
= 25 °C -0.5 -0.8 -1.3 V
I
DSS
drain leakage current V
DS
=-20V; V
GS
=0V; T
j
=25°C ---1µA
V
DS
=-20V; V
GS
=0V; T
j
= 150 °C - - -10 µA
I
GSS
gate leakage current V
GS
=8V; V
DS
=0V; T
j
=25°C ---2µA
V
GS
=-8V; V
DS
=0V; T
j
=25°C ---2µA
V
GS
=4.5V; V
DS
=0V; T
j
=25°C ---0.5µA
V
GS
=-4.5V; V
DS
=0V; T
j
=25°C ---0.5µA
R
DSon
drain-source on-state
resistance
V
GS
=-4.5V; I
D
= -400 mA; T
j
= 25 °C - 0.67 0.85 Ω
V
GS
=-4.5V; I
D
= -400 mA; T
j
= 150 °C - 1.1 1.4 Ω
V
GS
=-2.5V; I
D
= -200 mA; T
j
=25°C - 1.2 1.5 Ω
V
GS
=-1.8V; I
D
=-10mA; T
j
=25°C - 1.8 2.8 Ω
g
fs
forward
transconductance
V
DS
=-10V; I
D
= -200 mA; T
j
= 25 °C - 610 - mS
Dynamic characteristics (per transistor)
Q
G(tot)
total gate charge V
DS
=-10V; I
D
= -400 mA;
V
GS
=-4.5V; T
j
=25°C
- 0.76 1.14 nC
Q
GS
gate-source charge - 0.28 - nC
Q
GD
gate-drain charge - 0.18 - nC
C
iss
input capacitance V
DS
= -10 V; f = 1 MHz; V
GS
=0V;
T
j
=25°C
- 5887pF
C
oss
output capacitance - 21 - pF
C
rss
reverse transfer
capacitance
-12-pF
t
d(on)
turn-on delay time V
DS
=-10V; R
L
= 250 Ω; V
GS
=-4.5V;
R
G(ext)
=6Ω; T
j
=25°C
- 1836ns
t
r
rise time - 30 - ns
t
d(off)
turn-off delay time - 80 160 ns
t
f
fall time - 72 - ns
Source-drain diode (per transistor)
V
SD
source-drain voltage I
S
= -300 mA; V
GS
=0V; T
j
= 25 °C -0.48 -0.84 -1.2 V
PMDT670UPE All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 13 September 2011 7 of 16
NXP Semiconductors
PMDT670UPE
20 V, 550 mA dual P-channel Trench MOSFET
T
j
= 25 °C T
j
= 25 °C; V
DS
= -5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
T
j
= 25 °C
(1) V
GS
= -1.5 V
(2) V
GS
= -1.8 V
(3) V
GS
= -2.0 V
(4) V
GS
= -2.5 V
(5) V
GS
= -4.5 V
I
D
= -400 mA
(1) T
j
= 150 °C
(2) T
j
= 25 °C
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
V
DS
(V)
0-4-3-1 -2
017aaa363
-0.2
-0.3
-0.1
-0.4
-0.5
I
D
(A)
0.0
-4.5 V
-2.5 V
-2.0 V
V
GS
= -1.8 V
-1.6 V
-1.4 V
017aaa364
V
GS
(V)
0.0 -1.5-1.0-0.5
-10
-4
-10
-5
-10
-3
I
D
(A)
-10
-6
(1)
(2)
(3)
I
D
(A)
0.0 -0.5-0.4-0.2 -0.3-0.1
017aaa365
2
1
3
4
R
DSon
(Ω)
0
(1)
(2) (3)
(4)
(5)
V
GS
(V)
0-5-4-2 -3-1
017aaa366
2
1
3
4
R
DSon
(Ω)
0
(1)
(2)
PMDT670UPE All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 13 September 2011 8 of 16
NXP Semiconductors
PMDT670UPE
20 V, 550 mA dual P-channel Trench MOSFET
V
DS
> I
D
× R
DSon
(1) T
j
= 25 °C
(2) T
j
= 150 °C
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 11. Normalized drain-source on-state resistance as
a function of ambient temperature; typical
values
I
D
= -0.25 mA; V
DS
= V
GS
(1) maximum values
(2) typical values
(3) minimum values
f = 1 MHz; V
GS
= 0 V
(1) C
iss
(2) C
oss
(3) C
rss
Fig 12. Gate-source threshold voltage as a function of
junction temperature
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
V
GS
(V)
0.0 -2.0-1.5-0.5 -1.0
017aaa367
-0.2
-0.3
-0.1
-0.4
-0.5
I
D
(A)
0.0
(1)
(2)
T
j
(°C)
-60 180120060
017aaa368
1.0
0.5
1.5
2.0
a
0.0
T
j
(°C)
-60 180120060
017aaa369
-0.5
-1.0
-1.5
V
GS(th)
(V)
0.0
(1)
(2)
(3)
017aaa370
V
DS
(V)
-10
-1
-10
2
-10-1
10
10
2
C
(pF)
1
(1)
(2)
(3)
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

PMDT670UPE,115

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Buy PMDT670UPE,115
Manufacturer:
Nexperia
Description:
MOSFET 20V 550 MA DUAL P-CH TRENCH MOSFET
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