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IHW30N100R

P1-P3P4-P6P7-P9P10-P12
IHW30N100R
Soft Switching Series q
Power Semiconductors
1 Rev. 2.2 Nov 08
Reverse Conducting IGBT with monolithic body diode
Features:
• 1.5V Forward voltage of monolithic body Diode
• Full Current Rating of monolithic body Diode
• Specified for T
Jmax
= 175°C
• Trench and Fieldstop technology for 1000 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in V
CE(sat)
• Low EMI
• Qualified according to JEDEC
1
for target applications
• Pb-free lead plating; RoHS compliant
Applications:
• Microwave Oven
• Soft Switching Applications
Type V
CE
I
C
V
CE(sat),Tj=25°C
T
j,max
Marking Package
IHW30N100R 1000V 30A 1.5V
175°C
H30R100 PG-TO-247-3
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V
CE
1000 V
DC collector current
T
C
= 25°C
T
C
= 100°C
I
C
60
30
Pulsed collector current, t
p
limited by T
jmax
I
Cpuls
90
Turn off safe operating area V
CE
≤ 1000V, T
j
≤ 175°C
-
90
Diode forward current
T
C
= 25°C
T
C
= 100°C
I
F
60
30
Diode pulsed current, t
p
limited by T
jmax
I
Fpuls
90
A
Gate-emitter voltage
Transient Gate-emitter voltage (t
p
< 5 ms)
V
GE
±20
±25
V
Power dissipation, T
C
= 25°C
P
tot
412 W
Operating junction temperature T
j
-40...+175
°C
Storage temperature T
stg
-55...+175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260
°C
1
J-STD-020 and JESD-022
G
C
E
PG-TO-247-3
IHW30N100R
Soft Switching Series q
Power Semiconductors
2 Rev. 2.2 Nov 08
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance,
junction – case
R
thJC
0.36
Diode thermal resistance,
junction – case
R
thJCD
0.36
Thermal resistance,
junction – ambient
R
thJA
40
K/W
Electrical Characteristic, at T
j
= 25 °C, unless otherwise specified
Value
Parameter Symbol Conditions
min. Typ. max.
Unit
Static Characteristic
Collector-emitter breakdown voltage V
(BR)CES
V
GE
=0V, I
C
=500μA
1000 - -
Collector-emitter saturation voltage V
CE(sat)
V
GE
= 15V, I
C
=30A
T
j
=25°C
T
j
=150° C
T
j
=175° C
-
-
-
1.5
1.7
1.75
1.7
-
-
Diode forward voltage
V
F
V
GE
=0V, I
F
=30A
T
j
=25°C
T
j
=150° C
T
j
=175° C
-
-
-
1.5
1.65
1.7
1.7
-
-
Gate-emitter threshold voltage V
GE(th)
I
C
=700μA,V
CE
=V
GE
5.1 5.8 6.4
V
Zero gate voltage collector current
I
CES
V
CE
=1000V,
V
GE
=0V
T
j
=25°C
T
j
=175° C
-
-
-
-
5
2500
μA
Gate-emitter leakage current I
GES
V
CE
=0V,V
GE
=20V - - 600 nA
Transconductance g
fs
V
CE
=20V, I
C
=30A - 56 - S
Dynamic Characteristic
Input capacitance C
iss
- 2791 -
Output capacitance C
oss
- 82 -
Reverse transfer capacitance C
rss
V
CE
=25V,
V
GE
=0V,
f=1MHz
- 78 -
pF
Gate charge Q
Gate
V
CC
=800V, I
C
=30A
V
GE
=15V
- 209 - nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
L
E
- 13 - nH
IHW30N100R
Soft Switching Series q
Power Semiconductors
3 Rev. 2.2 Nov 08
Switching Characteristic, Inductive Load, at T
j
=25 °C
Value
Parameter Symbol Conditions
min. Typ. max.
Unit
IGBT Characteristic
Turn-off delay time t
d(off)
- 846 -
Fall time t
f
- 33.3
Turn-on energy E
on
- -
Turn-off energy E
off
- 2.1
Total switching energy E
ts
T
j
=25°C,
V
CC
=600V,I
C
=30A,
V
GE
=0/15V,
R
G
=26Ω,
- - -
mJ
Switching Characteristic, Inductive Load, at T
j
=175 °C
Value
Parameter Symbol Conditions
min. Typ. max.
Unit
IGBT Characteristic
Turn-off delay time t
d(off)
- 948 -
Fall time t
f
- 40.4 -
Turn-on energy E
on
- - -
Turn-off energy E
off
- 2.86 -
Total switching energy E
ts
T
j
=175° C
V
CC
=600V,
I
C
=30A,
V
GE
=0/15V,
R
G
= 26Ω
- - -
mJ
P1-P3P4-P6P7-P9P10-P12

IHW30N100R

Mfr. #:
Buy IHW30N100R
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors REVERSE CONDUCT IGBT 1000V 30A
Lifecycle:
New from this manufacturer.
Delivery:
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