IHW30N100R
Soft Switching Series q
Power Semiconductors
7 Rev. 2.2 Nov 08
E, SWITCHING ENERGY LOSSES
0A 10A 20A 30A 40A 50A
0.0mJ
1.0mJ
2.0mJ
3.0mJ
4.0mJ
5.0mJ
E
off
E, SWITCHING ENERGY LOSSES
20Ω 30Ω 40Ω
0.0mJ
1.0mJ
2.0mJ
3.0mJ
E
off
I
C
, COLLECTOR CURRENT
R
G
, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T
J
= 175°C,
V
CE
= 600V, V
GE
= 0/15V, R
G
=26Ω,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T
J
= 175°C,
V
CE
= 600V, V
GE
= 0/15V, I
C
= 30A,
Dynamic test circuit in Figure E)
E, SWITCHING ENERGY LOSSES
25°C 50°C 75°C 100°C 125°C 150°C
0.0mJ
0.5mJ
1.0mJ
1.5mJ
2.0mJ
2.5mJ
E
off
E, SWITCHING ENERGY LOSSES
400V 500V 600V 700V
0.0mJ
0.5mJ
1.0mJ
1.5mJ
2.0mJ
2.5mJ
3.0mJ
E
off
T
J
, JUNCTION TEMPERATURE V
CE
, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, V
CE
= 600V,
V
GE
= 0/15V, I
C
= 30A, R
G
= 26Ω,
Dynamic test circuit in Figure E)
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, T
J
= 175°C,
V
GE
= 0/15V, I
C
= 30A, R
G
= 26Ω,
Dynamic test circuit in Figure E)
