IHW30N100R
Soft Switching Series q
Power Semiconductors
6 Rev. 2.2 Nov 08
t, SWITCHING TIMES
0A 10A 20A 30A 40A 50A
100ns
1000ns
t
f
t
d(off)
t, SWITCHING TIMES
20Ω 30Ω 40Ω
10ns
100ns
1000ns
t
f
t
d(off)
I
C
, COLLECTOR CURRENT
R
G
, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, T
J
=175°C,
V
CE
= 600V, V
GE
= 0/15V, R
G
=26Ω,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, T
J
= 175°C,
V
CE
= 600V, V
GE
= 0/15V, I
C
= 30A,
Dynamic test circuit in Figure E)
t, SWITCHING TIMES
25°C 50°C 75°C 100°C 125°C 150°C
100ns
1000ns
t
f
t
d(off)
V
GE(th),
GATE-EMITTER THRESHOLD VOLTAGE
-50°C 0°C 50°C 100°C
2V
3V
4V
5V
6V
max.
typ.
min.
T
J
, JUNCTION TEMPERATURE T
J
, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, V
CE
= 600V,
V
GE
= 0/15V, I
C
= 30A, R
G
=26Ω,
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(I
C
= 0.7mA)