Data Sheet AD8615/AD8616/AD8618
HIGH SPEED PHOTODIODE PREAMPLIFIER
The AD8615/AD8616/AD8618 are excellent choices for I-to-V
conversions. The very low input bias, low current noise, and
high unity-gain bandwidth of the parts make them suitable,
especially for high speed photodiode preamplifiers.
In high speed photodiode applications, the diode is operated in a
photoconductive mode (reverse biased). This lowers the junction
capacitance at the expense of an increase in the amount of dark
current that flows out of the diode.
The total input capacitance, C1, is the sum of the diode and op
amp input capacitances. This creates a feedback pole that causes
degradation of the phase margin, making the op amp unstable.
Therefore, it is necessary to use a capacitor in the feedback to
compensate for this pole.
To get the maximum signal bandwidth, select
U
f2R
1C
2C
π
=
2
where f
U
is the unity-gain bandwidth of the amplifier.
V–
+2.5V
V+
–2.5V
R2
C2
C
IN
C
D
R
SH
I
D
–V
BIAS
+
04648-044
Figure 44. High Speed Photodiode Preamplifier
ACTIVE FILTERS
The low input bias current and high unity-gain bandwidth of
the AD8616 make it an excellent choice for precision filter design.
Figure 45 shows the implementation of a second-order, low-pass
filter. The Butterworth response has a corner frequency of 100 kHz
and a phase shift of 90°. The frequency response is shown in
Figure 46.
V–
V
CC
V+
V
EE
2nF
1nF
1.1k
1.1k
V
IN
04648-045
Figure 45. Second-Order, Low-Pass Filter
–40
–30
–20
–10
0
10
GAIN (dB)
10.1 10 100 1k 10k 100k 1M
FREQUENCY (Hz)
04648-046
Figure 46. Second-Order Butterworth, Low-Pass Filter Frequency Response
POWER DISSIPATION
Although the AD8615/AD8616/AD8618 are capable of providing
load currents up to 150 mA, the usable output, load current,
and drive capability are limited to the maximum power dissipation
allowed by the device package.
In any application, the absolute maximum junction temperature
for the AD8615/AD8616/AD8618 is 150°C. This should never
be exceeded because the device could suffer premature failure.
Accurately measuring power dissipation of an integrated circuit
is not always a straightforward exercise; Figure 47 is a design aid
for setting a safe output current drive level or selecting a heat
sink for the package options available on the AD8616.
POWER DISSIPATION (W)
TEMPERATURE (°C)
0
0
0.5
1.0
1.5
20
40 60 80
120100 140
SOIC
MSOP
04648-047
Figure 47. Maximum Power Dissipation vs. Ambient Temperature
These thermal resistance curves were determined using the
AD8616 thermal resistance data for each package and a
maximum junction temperature of 150°C.
Rev. G | Page 13 of 20
AD8615/AD8616/AD8618 Data Sheet
The following formula can be used to calculate the internal
junction temperature of the AD8615/AD8616/AD8618 for any
application:
T
J
= P
DISS
× θ
JA
+ T
A
where:
T
J
= junction temperature
P
DISS
= power dissipation
θ
JA
= package thermal resistance, junction-to-case
T
A
= ambient temperature of the circuit
To calculate the power dissipated by the AD8615/AD8616/
AD8618, use the following:
P
DISS
= I
LOAD
× (V
S
V
OUT
)
where:
I
LOAD
= output load current
V
S
= supply voltage
V
OUT
= output voltage
The quantity within the parentheses is the maximum voltage
developed across either output transistor.
POWER CALCULATIONS FOR VARYING OR
UNKNOWN LOADS
Often, calculating power dissipated by an integrated circuit to
determine if the device is being operated in a safe range is not as
simple as it may seem. In many cases, power cannot be directly
measured. This may be the result of irregular output waveforms or
varying loads. Indirect methods of measuring power are required.
There are two methods to calculate power dissipated by an
integrated circuit. The first is to measure the package temperature
and the board temperature. The second is to directly measure
the circuits supply current.
Calculating Power by Measuring Ambient Temperature
and Case Temperature
The two equations for calculating the junction temperature are
T
J
= T
A
+ P θ
JA
where:
T
J
= junction temperature
T
A
= ambient temperature
θ
JA
= the junction-to-ambient thermal resistance
T
J
= T
C
+ P θ
JC
where:
T
C
is case temperature.
θ
JA
and θ
JC
are given in the data sheet.
The two equations for calculating P (power) are
T
A
+ P θ
JA
= T
C
+ P θ
JC
P = (T
A
T
C
)/(θ
JC
θ
JA
)
Once the power is determined, it is necessary to recalculate the
junction temperature to ensure that the temperature was not
exceeded.
The temperature should be measured directly on and near the
package but not touching it. Measuring the package can be
difficult. A very small bimetallic junction glued to the package
can be used, or an infrared sensing device can be used, if the
spot size is small enough.
Calculating Power by Measuring Supply Current
If the supply voltage and current are known, power can be
calculated directly. However, the supply current can have a dc
component with a pulse directed into a capacitive load, which
can make the rms current very difficult to calculate. This difficulty
can be overcome by lifting the supply pin and inserting an rms
current meter into the circuit. For this method to work, make
sure the current is delivered by the supply pin being measured.
This is usually a good method in a single-supply system; however,
if the system uses dual supplies, both supplies may need to be
monitored.
Rev. G | Page 14 of 20
Data Sheet AD8615/AD8616/AD8618
OUTLINE DIMENSIONS
091508-A
*
COMPLIANT TO JEDEC STANDARDS MO-193-AB WITH
THE EXCEPTION OF PACKAGE HEIGHT AND THICKNESS.
1.60 BSC
2.80 BSC
1.90
BSC
0.95 BSC
0.20
0.08
0.60
0.45
0.30
0.50
0.30
0.10 MAX
*
1.00 MAX
*
0.90 MAX
0.70 NOM
2.90 BSC
5 4
1 2 3
SEATING
PLANE
Figure 48. 5-Lead Thin Small Outline Transistor Package [TSOT]
(UJ-5)
Dimensions shown in millimeters
COMPLIANT TO JEDEC STANDARDS MO-187-AA
0.80
0.55
0.40
4
8
1
5
0.65 BSC
0.40
0.25
1.10 MAX
3.20
3.00
2.80
COPLANARITY
0.10
0.23
0.09
3.20
3.00
2.80
5.15
4.90
4.65
PIN 1
IDENTIFIER
15° MAX
0.95
0.85
0.75
0.15
0.05
10-07-2009-B
Figure 49. 8-Lead Mini Small Outline Package [MSOP]
(RM-8)
Dimensions shown in millimeters
Rev. G | Page 15 of 20

AD8618ARZ-REEL

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Precision Amplifiers Prec 20MHz CMOS Quad RR
Lifecycle:
New from this manufacturer.
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