IDT8N3SV76 Data Sheet LVPECL-FREQUENCY PROGRAMMABLE VCXO
IDT8N3SV76CCD
REVISION A NOVEMBER 19, 2013 13 ©2013 Integrated Device Technology, Inc.
Power Considerations
This section provides information on power dissipation and junction temperature for the IDT8N3SV76.
Equations and example calculations are also provided.
1. Power Dissipation.
The total power dissipation for the IDT8N3SV76 is the sum of the core power plus the power dissipated in the load(s).
The following is the power dissipation for V
CC
= 3.3V + 5% = 3.465V, which gives worst case results.
NOTE: Please refer to Section 3 for details on calculating power dissipated in the load.
Power (core)
MAX
=V
CC_MAX
*I
EE_MAX
= 3.465V * 157mA = 554.40mW
Power (outputs)
MAX
= 30mW/Loaded Output pair
Total Power_
MAX
(3.3V, with all outputs switching) = 544.0mW + 30mW = 574.0mW
2. Junction Temperature.
Junction temperature, Tj, is the temperature at the junction of the bond wire and bond pad directly affects the reliability of the device. The
maximum recommended junction temperature is 125°C. Limiting the internal transistor junction temperature, Tj, to 125°C ensures that the bond
wire and bond pad temperature remains below 125°C.
The equation for Tj is as follows: Tj =
JA
* Pd_total + T
A
Tj = Junction Temperature
JA
= Junction-to-Ambient Thermal Resistance
Pd_total = Total Device Power Dissipation (example calculation is in section 1 above)
T
A
= Ambient Temperature
In order to calculate junction temperature, the appropriate junction-to-ambient thermal resistance
JA
must be used. Assuming no air flow and
a multi-layer board, the appropriate value is 49.4°C/W per Table 6 below.
Therefore, Tj for an ambient temperature of 85°C with all outputs switching is:
85°C + 0.574W * 49.4°C/W = 113.4°C. This is well below the limit of 125°C.
This calculation is only an example. Tj will obviously vary depending on the number of loaded outputs, supply voltage, air flow and the type of
board (multi-layer).
Table 6. Thermal Resistance
JA
for 6 Lead Ceramic VFQFN, Forced Convection
JA
by Velocity
Meters per Second 012
Multi-Layer PCB, JEDEC Standard Test Boards 49.4°C/W 44.2°C/W 42.1°C/W
IDT8N3SV76 Data Sheet LVPECL-FREQUENCY PROGRAMMABLE VCXO
IDT8N3SV76CCD
REVISION A NOVEMBER 19, 2013 14 ©2013 Integrated Device Technology, Inc.
3. Calculations and Equations.
The purpose of this section is to calculate the power dissipation for the LVPECL output pair.
LVPECL output driver circuit and termination are shown in Figure 4.
Figure 4. LVPECL Driver Circuit and Termination
To calculate worst case power dissipation into the load, use the following equations which assume a 50 load, and a termination voltage of
V
CC
–2V.
For logic high, V
OUT
=V
OH_MAX
= V
CC_MAX
0.9V
(V
CC_MAX
–V
OH_MAX
)=0.9V
For logic low, V
OUT
=V
OL_MAX
= V
CC_MAX
1.7V
(V
CC_MAX
–V
OL_MAX
)=1.7V
Pd_H is power dissipation when the output drives high.
Pd_L is the power dissipation when the output drives low.
Pd_H = [(V
OH_MAX
–(V
CC_MAX
2V))/R
L
]*(V
CC_MAX
–V
OH_MAX
)=[(2V–(V
CC_MAX
–V
OH_MAX
))/R
L
]*(V
CC_MAX
–V
OH_MAX
)=
[(2V 0.9V)/50] * 0.9V = 19.8mW
Pd_L = [(V
OL_MAX
–(V
CC_MAX
2V))/R
L
]*(V
CC_MAX
–V
OL_MAX
)=[(2V–(V
CC_MAX
–V
OL_MAX
))/R
L]
*(V
CC_MAX
–V
OL_MAX
)=
[(2V 1.7V)/50] * 1.7V = 10.2mW
Total Power Dissipation per output pair = Pd_H + Pd_L = 30mW
V
OUT
V
CC
V
CC
- 2V
Q1
RL
50Ω
IDT8N3SV76 Data Sheet LVPECL-FREQUENCY PROGRAMMABLE VCXO
IDT8N3SV76CCD
REVISION A NOVEMBER 19, 2013 15 ©2013 Integrated Device Technology, Inc.
Reliability Information
JA
vs. Air Flow
Meters per Second 0 1 2
Multi-Layer PCB, JEDEC Standard Test Boards 49.4°C/W 44.2°C/W 42.1°C/W
Transistor Count
The transistor count for IDT8N3SV76 is: 47,414
Table 7.
JA
vs. Air Flow Table for a 6-lead Ceramic 5mm x 7mm Package

8N3SV76FC-0113CDI

Mfr. #:
Manufacturer:
Description:
IC OSC VCXO 156.25MHZ 6-CLCC
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