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8N3SV76FC-0113CDI

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20
IDT8N3SV76 Data Sheet LVPECL-FREQUENCY PROGRAMMABLE VCXO
IDT8N3SV76CCD
REVISION A NOVEMBER 19, 2013 4 ©2013 Integrated Device Technology, Inc.
Absolute Maximum Ratings
NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These ratings are stress
specifications only. Functional operation of the product at these conditions or any conditions beyond those listed in the DC Characteristics or
AC Characteristics is not implied. Exposure to absolute maximum rating conditions for extended periods may affect product reliability
.
Supply Voltage, V
CC
3.63V
Inputs, V
I
-0.5V to V
CC
+ 0.5V
Outputs, I
O
(LVPECL)
Continuous Current
Surge Current
50mA
100mA
Package Thermal Impedance,
JA
49.4C/W (0 mps)
Storage Temperature, T
STG
-65Cto150C
DC Electrical Characteristics
NOTE 1: Outputs terminated with 50 to V
CC
–2V.
Table 4D. LVPECL DC Characteristics, V
CC
= 2.5V ± 5%, V
EE
= 0V, T
A
= -40°C to 85°C
Test Conditions Minimum Typical Maximum Units
V
OH
Output High Voltage; NOTE 1 V
CC
– 1.4 V
CC
– 0.8 V
V
OL
Output Low Voltage; NOTE 1 V
CC
– 2.0 V
CC
– 1.5 V
V
SWING
Peak-to-Peak Output Voltage
Swing
0.4 1.0 V
NOTE 1: Outputs terminated with 50 to
V
CC
–2V.
Item Rating
Table 4A. Power Supply DC Characteristics, V
CC
= 3.3V ± 5%, V
EE
=0V,T
A
= -40°C to 85°C
Symbol Parameter Test Conditions Minimum Typical Maximum Units
V
CC
Power Supply Voltage 3.135 3.3 3.465 V
I
EE
Power Supply Current 130 157 mA
Table 4B. Power Supply DC Characteristics, V
CC
= 2.5V ± 5%, V
EE
=0V,T
A
= -40°C to 85°C
Symbol Parameter Test Conditions Minimum Typical Maximum Units
V
CC
Power Supply Voltage 2.375 2.5 2.625 V
I
EE
Power Supply Current 125 152 mA
Table 4C. LVPECL DC Characteristics, V
CC
= 3.3V ± 5%, V
EE
=0V,T
A
= -40°C to 85°C
Symbol Parameter Test Conditions Minimum Typical Maximum Units
V
OH
Output High Voltage; NOTE 1 V
CC
– 1.4 V
CC
– 0.8 V
V
OL
Output Low Voltage; NOTE 1 V
CC
– 2.0 V
CC
– 1.7 V
V
SWING
Peak-to-Peak Output Voltage
Swing
0.6 1.0 V
Symbol Parameter
Table 4E. LVCMOS/LVTTL DC Characteristic, V
CC
= 3.3V ± 5% or 2.5V ± 5%, V
EE
= 0V, T
A
= -40°C to 85°C
Test Conditions Minimum Typical Maximum Units
V
IH
Input High Voltage
V
CC
= 3.3V 2 V
CC
+ 0.3 V
V
CC
= 2.5V 1.7 V
CC
+ 0.3 V
V
IL
Input Low Voltage
V
CC
=V
IN
= 3.465V -0.3 0.8 V
V
CC
=V
IN
= 2.5V -0.3 0.7 V
I
IH
Input High Current nOE V
CC
=V
IN
= 3.465V or 2.625V 150 µA
I
IL
Input Low Current nOE V
CC
= 3.465V or 2.625V, V
IN
=0V -10 µA
IDT8N3SV76 Data Sheet LVPECL-FREQUENCY PROGRAMMABLE VCXO
IDT8N3SV76CCD
REVISION A NOVEMBER 19, 2013 5 ©2013 Integrated Device Technology, Inc.
Symbol Parameter
IDT8N3SV76 Data Sheet LVPECL-FREQUENCY PROGRAMMABLE VCXO
IDT8N3SV76CCD
REVISION A NOVEMBER 19, 2013 6 ©2013 Integrated Device Technology, Inc.
AC Electrical Characteristics
Notes continued on next page.
Table 5A. AC Characteristics, V
CC
= 3.3V ± 5% or 2.5V ± 5%, V
EE
=0V,T
A
= -40°C to 85°C
Symbol Parameter Test Conditions Minimum Typical Maximum Units
f
OUT
Output Frequency Q, nQ
15.476 866.67 MHz
975 1,300 MHz
f
I
Initial Accuracy Measured @ 25°C, V
C
=V
CC
/2 ±10 ppm
f
S
Temperature Stability
Option code=AorB ±100 ppm
Option code=EorF ±50 ppm
Option code=KorL ±20 ppm
f
A
Aging
Frequency drift over 10 year life ±3 ppm
Frequency drift over 15 year life ±5 ppm
f
T
Total Stability
Option code A, B (10 year life) ±113 ppm
Option code E, F (10 year life) ±63 ppm
Option code K, L (10 year life) ±33 ppm
tjit(cc) Cycle-to-Cycle Jitter; NOTE 1 6 12 ps
tjit(per) RMS Period Jitter; NOTE 1 1.8 2.8 ps
tjit(Ø)
RMS Phase Jitter (Random);
NOTE 2
156.25MHz, Integration Range:
12kHz - 20MHz
0.66 ps
tjit(Ø)
RMS Phase Jitter (Random);
NOTE 2
156.25MHz, Integration Range:
1kHz - 40MHz
0.9 1.3 ps
tjit(Ø)
RMS Phase Jitter (Random);
NOTE 2,3,4
f
XTAL
= 114.285mhz
500MHz f
OUT
1300MHz 0.44 0.77 ps
100MHz f
OUT
500MHz 0.52 0.90 ps
15MHz f
OUT
100MHz 0.72 1.2 ps
N
(100)
Single-side band phase
noise, 100Hz from Carrier
156.25MHz -69 dBc/Hz
N
(1k)
Single-side band phase
noise, 1kHz from Carrier
156.25MHz -98 dBc/Hz
N
(10k)
Single-side band phase
noise, 10kHz from Carrier
156.25MHz -123 dBc/Hz
N
(100k)
Single-side band phase
noise, 100kHz from Carrier
156.25MHz -128 dBc/Hz
N
(1M)
Single-side band phase
noise, 1MHz from Carrier
156.25MHz -140 dBc/Hz
N
(10M)
Single-side band phase
noise, 10MHz from Carrier
156.25MHz -145 dBc/Hz
PSNR
Power Supply Noise
Rejection
50mV Sinusoidal Noise
1kHz - 50MHz
-71.2 dBc
t
R
/t
F
Output Rise/Fall Time 20% to 80% 80 500 ps
odc Output Duty Cycle 45 55 %
t
STARTUP
Device startup time after
power up
10 ms
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20

8N3SV76FC-0113CDI

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IC OSC VCXO 156.25MHZ 6-CLCC
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