NXP Semiconductors
MF1S50YYX_V1
MIFARE Classic EV1 1K - Mainstream contactless smart card IC for fast and easy solution development
MF1S50yyX_V1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2018. All rights reserved.
Product data sheet Rev. 3.2 — 23 May 2018
COMPANY PUBLIC 279232 26 / 36
Symbol Parameter Min Max Unit
T
stg
storage temperature -55 125 °C
T
amb
ambient temperature -25 70 °C
V
ESD
electrostatic discharge voltage on LA/LB
[1]
2 - kV
[1] ANSI/ESDA/JEDEC JS-001; Human body model: C = 100 pF, R = 1.5 kΩ
CAUTION
This device has limited built-in ElectroStatic Discharge (ESD) protection.
The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the gates.
14 Characteristics
Table 31. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
C
i
input capacitance
[1]
14.9 16.9 19.0 pF
f
i
input frequency - 13.56 - MHz
EEPROM characteristics
t
ret
retention time T
amb
= 22 °C 10 - - year
N
endu(W)
write endurance T
amb
= 22 °C 100000 200000 - cycle
[1] T
amb
=22°C, f=13,56Mhz, V
LaLb
= 1,5 V RMS
15 Wafer specification
For more details on the wafer delivery forms see Ref. 9.
Table 32. Wafer specifications MF1S50yyXDUy
Wafer
diameter 200 mm typical (8 inches)
300 mm typical (12 inches)
maximum diameter after foil expansion 210 mm (8 inches)
not applicable (12 inches)
die seperation process laser dicing (8 inches)
blade dicing (12 inches)
thickness MF1S50yyXDUD 120 μm ± 15 μm
MF1S50yyXDUF 75 μm ± 10 μm
flatness not applicable
Potential Good Dies per Wafer (PGDW) 64727 (8 inches)
147540 (12 inches)
Wafer backside
material Si
