Philips Semiconductors
PHD110NQ03LT
N-channel TrenchMOS™ logic level FET
Product data Rev. 01 — 16 June 2004 2 of 12
9397 750 13468
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
3. Ordering information
4. Limiting values
Table 2: Ordering information
Type number Package
Name Description Version
PHD110NQ03LT D-PAK Plastic single-ended surface mounted package; 3 leads; one lead cropped SOT428
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage (DC) 25 °C ≤ T
j
≤ 175 °C - 25 V
V
DGR
drain-gate voltage (DC) 25 °C ≤ T
j
≤ 175 °C; R
GS
=20kΩ -25V
V
GS
gate-source voltage (DC) - ±20 V
I
D
drain current (DC) T
mb
=25°C; V
GS
=5V;Figure 2 and 3 -75A
T
mb
= 100 °C; V
GS
=5V;Figure 2 -65A
I
DM
peak drain current T
mb
=25°C; pulsed; t
p
≤ 10 µs; Figure 3 - 240 A
P
tot
total power dissipation T
mb
=25°C; Figure 1 - 115 W
T
stg
storage temperature −55 +175 °C
T
j
junction temperature −55 +175 °C
Source-drain diode
I
S
source (diode forward) current (DC) T
mb
=25°C - 75 A
I
SM
peak source (diode forward) current T
mb
=25°C; pulsed; t
p
≤ 10 µs - 240 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
unclamped inductive load; I
D
=43A;
t
p
= 0.25 ms; V
DD
≤ 15 V; R
GS
=50Ω;
V
GS
= 10 V; starting T
j
=25°C
- 185 mJ