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PHD110NQ03LT,118
P1-P3
P4-P6
P7-P9
P10-P12
Philips Semiconductors
PHD110NQ03L
T
N-channel T
renchMOS™ logic level FET
Product data
Rev
. 01 — 16 June 2004
7 of 12
9397 750 13468
© Koninklijk
e Philips Electronics N.V
. 2004. All r
ights reserved.
I
D
= 1 mA; V
DS
=V
GS
T
j
=2
5
°
C; V
DS
=5V
Fig 9.
Gate-source threshold v
oltage as a function of
junction temperature.
Fig 10.
Sub-threshold drain current as a function of
gate-source v
oltage.
V
GS
= 0 V
; f = 1 MHz
Fig 11.
Input, output and rever
se transfer capacitances as a function of drain-source v
oltage; typical values.
03aa33
0
0.
5
1
1.
5
2
2.
5
-
60
0
60
120
180
T
j
(
°
C)
V
GS(t
h)
(V)
max
ty
p
min
03aa36
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
0123
V
GS
(V)
I
D
(A)
max
ty
p
min
03af
16
10
2
10
3
10
4
10
-1
1
10
10
2
V
DS
(V
)
C
(pF
)
C
iss
C
oss
C
rss
Philips Semiconductors
PHD110NQ03L
T
N-channel T
renchMOS™ logic level FET
Product data
Rev
. 01 — 16 June 2004
8 of 12
9397 750 13468
© Koninklijk
e Philips Electronics N.V
. 2004. All r
ights reserved.
T
j
=2
5
°
C and 175
°
C; V
GS
=0V
I
D
= 50 A; V
DD
=1
5V
Fig 12.
Source (diode f
orward) current as a function of
source-drain (diode f
orward) v
oltage; typical
values.
Fig 13.
Gate-source v
oltage as a function of gate
charge; typical v
alues.
03af
15
0
20
40
60
80
0
0.3
0.6
0.9
1.2
V
SD
(V
)
I
S
(A
)
T
j
= 25
°
C
175
°
C
V
GS
= 0 V
03af
17
0
2
4
6
8
10
02
0
4
0
6
0
Q
G
(nC
)
V
GS
(V
)
I
D
= 50 A
T
j
= 25
°
C
V
DD
= 15 V
Philips Semiconductors
PHD110NQ03L
T
N-channel T
renchMOS™ logic level FET
Product data
Rev
. 01 — 16 June 2004
9 of 12
9397 750 13468
© Koninklijk
e Philips Electronics N.V
. 2004. All r
ights reserved.
7.
P
ac
kage outline
Fig 14.
SO
T428 (D-P
AK).
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
SOT428
TO-252
SC-63
99-09-13
01-12-11
0
10
20 mm
scale
Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads
(one lead cropped)
SOT428
E
b
2
E
1
wA
M
bc
b
1
L
1
L
13
2
D
D
1
H
E
L
2
Note
1. Measured from heatsink back to lead.
e
1
e
A
A
2
A
A
1
y
seating plane
mounting
base
A
1
(1)
D
b
E
1
EH
E
w
y
max.
A
2
b
2
b
1
c
D
1
min.
ee
1
L
1
min.
L
2
L
A
UNIT
DIMENSIONS (mm are the original dimensions)
0.2
0.2
mm
2.38
2.22
0.65
0.45
0.93
0.73
0.89
0.71
1.1
0.9
5.46
5.26
0.4
0.2
6.22
5.98
4.81
4.45
2.285
4.57
10.4
9.6
0.5
0.9
0.5
6.73
6.47
4.0
2.95
2.55
P1-P3
P4-P6
P7-P9
P10-P12
PHD110NQ03LT,118
Mfr. #:
Buy PHD110NQ03LT,118
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 25V 75A DPAK
Lifecycle:
New from this manufacturer.
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PHD110NQ03LT,118