Philips Semiconductors
PHD110NQ03LT
N-channel TrenchMOS™ logic level FET
Product data Rev. 01 — 16 June 2004 5 of 12
9397 750 13468
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
6. Characteristics
Table 5: Characteristics
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source breakdown voltage I
D
= 250 µA; V
GS
=0V
T
j
=25°C 25--V
T
j
= −55 °C 22--V
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
=V
GS
; Figure 9
T
j
=25°C 1 1.5 2 V
T
j
= 150 °C 0.5 - - V
T
j
= −55 °C - - 2.2 V
I
DSS
drain-source leakage current V
DS
=25V; V
GS
=0V
T
j
=25°C - 0.05 1 µA
T
j
= 175 °C - - 500 µA
I
GSS
gate-source leakage current V
GS
= ±15 V; V
DS
= 0 V - 10 100 nA
R
DSon
drain-source on-state resistance V
GS
=5V; I
D
=25A;Figure 7 and 8
T
j
=25°C - 5.3 6.2 mΩ
T
j
= 175 °C - 8.3 11.2 mΩ
V
GS
= 10 V; I
D
=25A;Figure 7 and 8 - 3.9 4.6 mΩ
Dynamic characteristics
Q
g(tot)
total gate charge I
D
=50A;V
DD
=15V;V
GS
=5V;Figure 13 - 26.7 - nC
Q
gs
gate-source charge - 8.5 - nC
Q
gd
gate-drain (Miller) charge - 8.4 - nC
C
iss
input capacitance V
GS
=0V; V
DS
= 25 V; f = 1 MHz;
Figure 11
-2200-pF
C
oss
output capacitance - 725 - pF
C
rss
reverse transfer capacitance - 290 - pF
t
d(on)
turn-on delay time V
DD
=15V; I
D
= 12.5 A; V
GS
=5V;
R
G
= 5.6 Ω
-18-ns
t
r
rise time -70-ns
t
d(off)
turn-off delay time - 75 - ns
t
f
fall time -70-ns
Source-drain diode
V
SD
source-drain (diode forward) voltage I
S
= 25 A; V
GS
=0V;Figure 12 - 0.85 1.2 V
t
rr
reverse recovery time I
S
= 10 A; dI
S
/dt = −100 A/µs; V
GS
=0V - 43 - ns
Q
r
recovered charge - 40 - nC
