CY7C1061GN30
16-Mbit (1 M words × 16 bit) Static RAM
Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600
Document Number: 001-93680 Rev. *A Revised September 11, 2015
16-Mbit (1 M words × 16 b it) Static RAM
Features
High speed
t
AA
= 10 ns
Low active power
I
CC
= 90 mA at 100 MHz
Low CMOS standby current
I
SB2
= 20 mA (typ)
Operating voltages of 2.2 V to 3.6 V
1.0 V data retention
Automatic power down when deselected
TTL compatible inputs and outputs
Easy memory expansion with CE
1
and CE
2
features
Available in Pb-free 54-pin TSOP II, and 48-ball VFBGA
packages
Offered in dual Chip Enable options
Functional Description
The CY7C1061GN30 is a high performance CMOS Static RAM
organized as 1,048,576 words by 16 bits.
To write to the device, take Chip Enables (CE
1
LOW and CE
2
HIGH) and Write Enable (WE) input LOW. If Byte Low Enable
(BLE
) is LOW, then data from I/O pins (I/O
0
through I/O
7
), is
written into the location specified on the address pins (A
0
through
A
19
). If Byte High Enable (BHE) is LOW, then data from I/O pins
(I/O
8
through I/O
15
) is written into the location specified on the
address pins (A
0
through A
19
).
To read from the device, take Chip Enables (CE
1
LOW and CE
2
HIGH) and Output Enable (OE) LOW while forcing the Write
Enable (WE
) HIGH. If Byte Low Enable (BLE) is LOW, then data
from the memory location specified by the address pins appears
on I/O
0
to I/O
7
. If Byte High Enable (BHE) is LOW, then data from
memory appears on I/O
8
to I/O
15
. See Truth Table on page 12
for a complete description of Read and Write modes.
The input or output pins (I/O
0
through I/O
15
) are placed in a high
impedance state when the device is deselected (CE
1
HIGH/CE
2
LOW), the outputs are disabled (OE HIGH), the BHE and BLE
are disabled (BHE, BLE HIGH), or during a write operation (CE
1
LOW, CE
2
HIGH, and WE LOW).
15
16
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
COLUMN
DECODER
ROW DECODER
SENSE AMPS
INPUT BUFFER
1M x 16
ARRAY
A
0
A
12
A
14
A
13
A
A
A
17
A
18
A
10
A
11
I/O
0
– I/O
7
OE
I/O
8
– I/O
15
CE
1
WE
BLE
BHE
A
9
A
19
CE
2
Logic Block Diagram
CY7C1061GN30
Document Number: 001-93680 Rev. *A Page 2 of 18
Contents
Selection Guide ................................................................3
Pin Configurations ...........................................................3
Maximum Ratings .............................................................5
Operating Range ............................................................... 5
DC Electrical Characteristics ..........................................5
Capacitance ......................................................................6
Thermal Resistance ..........................................................6
AC Test Loads and Waveforms .......................................6
Data Retention Characteristics ....................................... 7
Over the Operating Range ...............................................7
Data Retention Waveform ................................................ 7
AC Switching Characteristics .........................................8
Switching Waveforms ...................................................... 9
Truth Table ...................................................................... 12
Ordering Information ...................................................... 13
Ordering Code Definitions ......................................... 13
Package Diagrams .......................................................... 14
Acronyms ........................................................................ 16
Document Conventions ................................................. 16
Units of Measure ....................................................... 16
Document History Page ................................................. 17
Sales, Solutions, and Legal Information ...................... 18
Worldwide Sales and Design Support ....................... 18
Products .................................................................... 18
PSoC® Solutions ...................................................... 18
Cypress Developer Community ................................. 18
Technical Support ..................................................... 18
CY7C1061GN30
Document Number: 001-93680 Rev. *A Page 3 of 18
Selection Guide
Description -10 Unit
Maximum access time 10 ns
Maximum operating current 110 mA
Maximum CMOS standby current 30 mA
Pin Configurations
Figure 1. 48-ball VFBGA (8 × 9.5 × 1 mm) Dual Chip Enable pinout (Top View)
[1]
WE
A
11
A
10
A
6
A
0
A
3
CE
1
I/O
10
I/O
8
I/O
9
A
4
A
5
I/O
11
I/O
13
I/O
12
I/O
14
I/O
15
V
SS
A
9
A
8
OE
A
7
I/O
0
BHE
CE
2
A
17
A
2
A
1
BLE
I/O
2
I/O
1
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
A
15
A
14
A
13
A
12
NC
A
18
A
19
326
5
41
D
E
B
A
C
F
G
H
A
16
NC
V
CC
V
CC
V
SS
Note
1. NC pins are not connected internally to the die.

CY7C1061GN30-10ZSXIT

Mfr. #:
Manufacturer:
Cypress Semiconductor
Description:
SRAM Async SRAMS
Lifecycle:
New from this manufacturer.
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