CY7C1061GN30
Document Number: 001-93680 Rev. *A Page 4 of 18
Figure 2. 54-pin TSOP II (22.4 × 11.84 × 1.0 mm) pinout (Top View)
[2]
Pin Configurations (continued)
1
2
3
4
5
6
7
8
9
11
14
31
32
36
35
34
33
37
40
39
38
12
13
41
44
43
42
16
15
29
30
I/O
11
18
17
20
19
23
28
25
24
22
21
27
26
V
SS
I/O
10
I/O
12
V
CC
I/O
13
I/O
14
V
SS
A
16
A
17
A
11
A
12
A
13
A
14
I/O
0
A
15
I/O
7
I/O
9
V
CC
I/O
8
I/O
15
A
19
A
4
A
3
A
2
A
1
CE
1
V
CC
WE
CE
2
BLE
NC
V
SS
OE
A
8
A
7
A
6
A
5
A
0
NC
A
9
BHE
A
10
10
A
18
46
45
47
50
49
48
51
54
53
52
I/O
2
I/O
1
I/O
3
V
SS
V
CC
V
SS
I/O
6
I/O
5
V
CC
I/O
4
Note
2. NC pins are not connected internally to the die.
CY7C1061GN30
Document Number: 001-93680 Rev. *A Page 5 of 18
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ............................... –65 C to +150 C
Ambient Temperature
with Power Applied .................................. –55 C to +125 C
Supply Voltage on
V
CC
relative to GND
[3]
....................... –0.5 V to V
CC
+ 0.5 V
DC Voltage Applied to Outputs
in High Z State
[3]
................................ –0.5 V to V
CC
+ 0.5 V
DC Input Voltage
[3]
............................ –0.5 V to V
CC
+ 0.5 V
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage
(MIL-STD-883, Method 3015) .................................. >2001 V
Latch Up Current .................................................... >200 mA
Operating Range
Range Ambient Temperature V
CC
Industrial –40 C to +85 C 2.2 V to 3.6 V
DC Electrical Characteristics
Over the Operating Range
Parameter Description Test Conditions
-10
Unit
Min Typ
[4]
Max
V
OH
Output HIGH
voltage
2.2 V to 2.7 V V
CC
= Min, I
OH
= –0.1 mA 2.0 V
2.7 V to 3.6 V V
CC
= Min, I
OH
= –4.0 mA 2.2
V
OL
Output LOW
voltage
2.2 V to 2.7 V V
CC
= Min, I
OL
= 2 mA 0.4 V
2.7 V to 3.6 V V
CC
= Min, I
OL
= 8 mA 0.4
V
IH
Input HIGH
voltage
[3]
2.2 V to 2.7 V 2.0 V
CC
+ 0.3 V
2.7 V to 3.6 V 2.0 V
CC
+ 0.3
V
IL
Input LOW
voltage
[3]
2.2 V to 2.7 V –0.3 0.6 V
2.7 V to 3.6 V –0.3 0.8
I
IX
Input leakage current GND < V
I
< V
CC
–1 +1 A
I
OZ
Output leakage current GND < V
OUT
< V
CC
, Output disabled –1 +1 A
I
CC
V
CC
operating supply current V
CC
= Max,
f = f
MAX
= 1/t
RC
,
I
OUT
= 0 mA,
CMOS levels
– 90110mA
I
SB1
Automatic CE power down
current – TTL inputs
Max V
CC
,
CE
1
> V
IH
,
CE
2
< V
IL
,
V
IN
> V
IH
or V
IN
< V
IL
,
f = f
MAX
––40mA
I
SB2
Automatic CE power down
current – CMOS inputs
Max V
CC
,
CE
1
> V
CC
– 0.3 V, CE
2
< 0.3 V,
V
IN
> V
CC
– 0.3 V or V
IN
< 0.3 V,
f = 0
–2030mA
Note
3. V
IL(min)
= –2.0 V and V
IH(max)
= V
CC
+ 2 V for pulse durations of less than 2 ns.
4. Typical values are included only for reference and are not guaranteed or tested. Typical values are measured at V
CC
= 3 V (for a V
CC
range of 2.2 V–3.6 V), T
A
= 25 °C.
CY7C1061GN30
Document Number: 001-93680 Rev. *A Page 6 of 18
Capacitance
Parameter
[5]
Description Test Conditions 54-pin TSOP II 48-ball VFBGA Unit
C
IN
Input capacitance T
A
= 25 C, f = 1 MHz,
V
CC
= 3.3 V
10 10 pF
C
OUT
I/O capacitance 10 10 pF
Thermal Resistance
Parameter
[5]
Description Test Conditions 54-pin TSOP II 48-ball VFBGA Unit
JA
Thermal resistance
(junction to ambient)
Still air, soldered on a 3 × 4.5 inch, four
layer printed circuit board
93.63 31.50 C/W
JC
Thermal resistance
(junction to case)
21.58 15.75 C/W
AC Test Loads and Waveforms
Figure 3. AC Test Loads and Waveforms
[6]
90%
10%
3.0 V
GND
90%
10%
All Input Pulses
3.3 V
Output
5 pF*
Including
JIG and
Scope
(b)
R1 317
R2
351
Rise Time:
Fall Time:
> 1 V/ns
(c)
Output
50
Z
0
= 50
V
TH
= 1.5 V
30 pF*
* Capacitive Load Consists
of all Components of the
Test Environment
High-Z Characteristics:
(a)
> 1 V/ns
Notes
5. Tested initially and after any design or process changes that may affect these parameters.
6. Valid SRAM operation does not occur until the power supplies have reached the minimum operating V
DD
(3.0 V). 100 s (t
power
) after reaching the minimum operating
V
DD
, normal SRAM operation begins including reduction in V
DD
to the data retention (V
CCDR
, 1.0 V) voltage.

CY7C1061GN30-10ZSXIT

Mfr. #:
Manufacturer:
Cypress Semiconductor
Description:
SRAM Async SRAMS
Lifecycle:
New from this manufacturer.
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