CY7C1061GN30
Document Number: 001-93680 Rev. *A Page 7 of 18
Data Retention Characteristics
Over the Operating Range
Parameter Description Conditions Min Max Unit
V
DR
V
CC
for data retention 1 V
I
CCDR
Data retention current V
CC
= 1.2 V,
CE
1
> V
CC
– 0.2 V, CE
2
< 0.2 V,
V
IN
> V
CC
– 0.2 V or V
IN
< 0.2 V
–30mA
t
CDR
[7]
Chip deselect to data retention
time
–0ns
t
R
[8]
Operation recovery time 10 ns
Data Retention Waveform
Figure 4. Data Retention Waveform
[9]
3.0 V3.0 V
t
CDR
V
DR
> 1 V
Data Retention Mode
t
R
CE
V
CC
Notes
7. Tested initially and after any design or process changes that may affect these parameters.
8. Full device operation requires linear V
CC
ramp from V
DR
to V
CC(min.)
> 100 s or stable at V
CC(min.)
> 100 s.
9. CE
is the logical combination of CE
1
and CE
2
. When CE
1
is LOW and CE
2
is HIGH, CE is LOW; when CE
1
is HIGH or CE
2
is LOW, CE is HIGH.
CY7C1061GN30
Document Number: 001-93680 Rev. *A Page 8 of 18
AC Switching Characteristics
Over the Operating Range
Parameter
[10]
Description
-10
Unit
Min Max
Read Cycle
t
power
V
CC
(typical) to the first access
[11]
100 s
t
RC
Read cycle time 10 ns
t
AA
Address to data valid 10 ns
t
OHA
Data hold from address change 3 ns
t
ACE
CE
1
LOW/CE
2
HIGH to data valid 10 ns
t
DOE
OE LOW to data valid 5 ns
t
LZOE
OE LOW to low Z
[12]
0–ns
t
HZOE
OE HIGH to high Z
[12]
–5ns
t
LZCE
CE
1
LOW/CE
2
HIGH to low Z
[12]
3–ns
t
HZCE
CE
1
HIGH/CE
2
LOW to high Z
[12]
–5ns
t
PU
CE
1
LOW/CE
2
HIGH to power-up
[13]
0–ns
t
PD
CE
1
HIGH/CE
2
LOW to power-down
[13]
–10ns
t
DBE
Byte enable to data valid 5 ns
t
LZBE
Byte enable to low Z 0 ns
t
HZBE
Byte disable to high Z 6 ns
Write Cycle
[14, 15]
t
WC
Write cycle time 10 ns
t
SCE
CE
1
LOW/CE
2
HIGH to write end 7 ns
t
AW
Address setup to write end 7 ns
t
HA
Address hold from write end 0–ns
t
SA
Address setup to write start 0 ns
t
PWE
WE pulse width 7–ns
t
SD
Data setup to write end 5 ns
t
HD
Data hold from write end 0 ns
t
LZWE
WE HIGH to low Z
[12,13.]
3–ns
t
HZWE
WE LOW to high Z
[12,13.]
–5ns
t
BW
Byte Enable to End of Write 7–ns
Notes
10. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5 V, and input pulse levels of 0 to 3.0 V. Test conditions for the read cycle use
output loading shown in part (a) of Figure 3 on page 6, unless specified otherwise.
11. t
POWER
gives the minimum amount of time that the power supply is at typical V
CC
values until the first memory access is performed.
12. t
HZOE
, t
HZCE
, t
HZWE
, t
HZBE
, t
LZOE
, t
LZCE
, t
LZWE
, and t
LZBE
are specified with a load capacitance of 5 pF as in (b) of Figure 3 on page 6. Transition is measured when output goes into
high impedance
13. These parameters are guaranteed by design and are not tested.
14. The internal write time of the memory is defined by the overlap of WE
, CE
1
= V
IL
, and CE
2
= V
IH
. Chip enables must be active and WE and byte enables must be
LOW to initiate a write, and the transition of any of these signals can terminate. The input data setup and hold timing should be referenced to the edge of the signal
that terminates the write.
15. The minimum write cycle time for Write Cycle No. 2 (WE
Controlled, OE LOW) is the sum of t
HZWE
and t
SD
.
CY7C1061GN30
Document Number: 001-93680 Rev. *A Page 9 of 18
Switching Waveforms
Figure 5. Read Cycle No. 1 (Address Transition Controlled)
[16, 17]
Figure 6. Read Cycle No. 2 (OE Controlled)
[17, 18, 19]
Previous Data Valid Data Valid
RC
t
AA
t
OHA
tRC
Address
Data Out
50%
50%
Data Valid
t
RC
t
ACE
t
DOE
t
LZOE
t
LZCE
t
PU
High Impedance
t
HZOE
t
HZBE
t
PD
High
OE
CE
ICC
ISB
Impedance
Address
Data Out
V
CC
Supply
t
DBE
t
LZBE
t
HZCE
BHE, BLE
Current
I
CC
I
SB
Notes
16. The device is continuously selected. OE
, CE
= V
IL
, BHE, BLE or both = V
IL
.
17. WE
is HIGH for read cycle.
18. CE
is the logical combination of CE
1
and CE
2
. When CE
1
is LOW and CE
2
is HIGH, CE is LOW; when CE
1
is HIGH or CE
2
is LOW, CE is HIGH.
19. Address valid before or similar to CE
transition LOW.

CY7C1061GN30-10ZSXIT

Mfr. #:
Manufacturer:
Cypress Semiconductor
Description:
SRAM Async SRAMS
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New from this manufacturer.
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