DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR3 component data sheets.
Component specifications are available at micron.com. Module speed grades correlate
with component speed grades, as shown below.
Table 10: Module and Component Speed Grades
DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade Component Speed Grade
-2G1 -093
-1G9 -107
-1G6 -125
-1G4 -15E
-1G1 -187E
-1G0 -187
-80C -25E
-80B -25
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level.
Micron encourages designers to simulate the signal characteristics of the system's
memory bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
4GB, 8GB (x72, ECC, SR) 240-Pin DDR3L RDIMM
DRAM Operating Conditions
PDF: 09005aef83ad1229
ksf18c512_1gx72pz.pdf - Rev. K 8/15 EN
13
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
I
DD
Specifications
Table 11: DDR3 I
DD
Specifications and Conditions – 4GB (Die Revision K)
Values are for the MT41K512M4 DDR3L SDRAM only and are computed from values specified in the 1.35V 2Gb (512 Meg x
4) component data sheet
Parameter Symbol 1600 1333 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
702 684 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE I
DD1
882 846 mA
Precharge power-down current: Slow exit I
DD2P0
216 216 mA
Precharge power-down current: Fast exit I
DD2P1
252 252 mA
Precharge quiet standby current I
DD2Q
360 360 mA
Precharge standby current I
DD2N
378 378 mA
Precharge standby ODT current I
DD2NT
558 522 mA
Active power-down current I
DD3P
378 378 mA
Active standby current I
DD3N
576 540 mA
Burst read operating current I
DD4R
1620 1404 mA
Burst write operating current I
DD4W
1674 1458 mA
Refresh current I
DD5B
3240 3222 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
216 216 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
270 270 mA
All banks interleaved read current I
DD7
2808 2700 mA
Reset current I
DD8
252 252 mA
4GB, 8GB (x72, ECC, SR) 240-Pin DDR3L RDIMM
I
DD
Specifications
PDF: 09005aef83ad1229
ksf18c512_1gx72pz.pdf - Rev. K 8/15 EN
14
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Table 12: DDR3 I
DD
Specifications and Conditions – 8GB (Die Revision E)
Values are for the MT41K1G4 DDR3L SDRAM only and are computed from values specified in the 1.35V 4Gb (1 Gig x 4)
component data sheet
Parameter Symbol 1600 1333 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
990 846 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE I
DD1
1098 1026 mA
Precharge power-down current: Slow exit I
DD2P0
324 324 mA
Precharge power-down current: Fast exit I
DD2P1
576 504 mA
Precharge quiet standby current I
DD2Q
576 504 mA
Precharge standby current I
DD2N
576 522 mA
Precharge standby ODT current I
DD2NT
702 630 mA
Active power-down current I
DD3P
684 630 mA
Active standby current I
DD3N
684 630 mA
Burst read operating current I
DD4R
2646 2340 mA
Burst write operating current I
DD4W
2124 1854 mA
Refresh current I
DD5B
4230 4104 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
360 360 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
450 450 mA
All banks interleaved read current I
DD7
3960 3420 mA
Reset current I
DD8
360 360 mA
4GB, 8GB (x72, ECC, SR) 240-Pin DDR3L RDIMM
I
DD
Specifications
PDF: 09005aef83ad1229
ksf18c512_1gx72pz.pdf - Rev. K 8/15 EN
15
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.

MT18KSF51272PZ-1G6M1

Mfr. #:
Manufacturer:
Micron
Description:
MODULE DDR3 SDRAM 4GB 240RDIMM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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