I
DD
Specifications
Table 11: DDR3 I
DD
Specifications and Conditions – 16GB (Die Revision E)
Values are for the MT41K512M8 DDR3L SDRAM only and are computed from values specified in the 1.35V 4Gb (512 Meg x
8) component data sheet
Parameter Symbol 1600 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
1
981 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE I
DD1
1
1080 mA
Precharge power-down current: Slow exit I
DD2P0
2
648 mA
Precharge power-down current: Fast exit I
DD2P1
2
1152 mA
Precharge quiet standby current I
DD2Q
2
1152 mA
Precharge standby current I
DD2N
2
1152 mA
Precharge standby ODT current I
DD2NT
1
837 mA
Active power-down current I
DD3P
2
1368 mA
Active standby current I
DD3N
2
1368 mA
Burst read operating current I
DD4R
1
1899 mA
Burst write operating current I
DD4W
1
1611 mA
Refresh current I
DD5B
1
2601 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
720 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
2
900 mA
All banks interleaved read current I
DD7
1
2466 mA
Reset current I
DD8
2
720 mA
Notes:
1. One module rank in the active I
DD
, the other ranks in I
DD2P0
(slow exit).
2. All ranks in this I
DD
condition.
16GB (x72, ECC, QR x8) 240-Pin DDR3L LRDIMM
I
DD
Specifications
PDF: 09005aef846600e0
kszf36c2gx72ldz.pdf - Rev. F 9/15 EN
16
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
Table 12: DDR3 I
DD
Specifications and Conditions – 16GB (Die Revision P)
Values are for the MT41K512M8 DDR3L SDRAM only and are computed from values specified in the 1.35V 4Gb (512 Meg x
8) component data sheet
Parameter Symbol 1600 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
1
522 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE I
DD1
1
657 mA
Precharge power-down current: Slow exit I
DD2P0
2
360 mA
Precharge power-down current: Fast exit I
DD2P1
2
396 mA
Precharge quiet standby current I
DD2Q
2
540 mA
Precharge standby current I
DD2N
2
576 mA
Precharge standby ODT current I
DD2NT
1
450 mA
Active power-down current I
DD3P
2
540 mA
Active standby current I
DD3N
2
720 mA
Burst read operating current I
DD4R
1
1080 mA
Burst write operating current I
DD4W
1
1179 mA
Refresh current I
DD5B
1
1638 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
540 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
2
828 mA
All banks interleaved read current I
DD7
1
1440 mA
Reset current I
DD8
2
468 mA
Notes:
1. One module rank in the active I
DD
, the other ranks in I
DD2P0
(slow exit).
2. All ranks in this I
DD
condition.
16GB (x72, ECC, QR x8) 240-Pin DDR3L LRDIMM
I
DD
Specifications
PDF: 09005aef846600e0
kszf36c2gx72ldz.pdf - Rev. F 9/15 EN
17
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
Temperature Sensor with Serial Presence-Detect EEPROM
The temperature sensor continuously monitors the module’s temperature and can be
read back at any time over the SMBus bus shared with the SPD EEPROM and memory
buffer.
Serial Presence-Detect
For the latest SPD data, refer to Micron's SPD page: www.micron.com/SPD.
Table 13: Temperature Sensor with SPD EEPROM Operating Conditions
Parameter/Condition Symbol Min Max Units
Supply voltage V
DDSPD
3.0 3.6 V
Supply current: V
DD
= 3.3V I
DD
2.0 mA
Input high voltage: Logic 1; SCL, SDA V
IH
V
DDSPD
x 0.7 V
DDSPD
+ 1 V
Input low voltage: Logic 0; SCL, SDA V
IL
–0.5 V
DDSPD
x 0.3 V
Output low voltage: I
OUT
= 2.1mA V
OL
0.4 V
Input current I
IN
–5.0 5.0 µA
Temperature sensing range –40 125 °C
Temperature sensor accuracy (class B) –1.0 1.0 °C
Table 14: Temperature Sensor and SPD EEPROM Serial Interface Timing
Parameter/Condition Symbol Min Max Units
Time bus must be free before a new transition can
start
t
BUF 4.7 µs
SDA fall time
t
F 20 300 ns
SDA rise time
t
R 1000 ns
Data hold time
t
HD:DAT 200 900 ns
Start condition hold time
t
H:STA 4.0 µs
Clock HIGH period
t
HIGH 4.0 50 µs
Clock LOW period
t
LOW 4.7 µs
SCL clock frequency
t
SCL 10 100 kHz
Data setup time
t
SU:DAT 250 ns
Start condition setup time
t
SU:STA 4.7 µs
Stop condition setup time
t
SU:STO 4.0 µs
EVENT# Pin
The temperature sensor also adds the EVENT# pin (open-drain). Although not used by
the SPD EEPROM, EVENT# is a temperature sensor output used to flag critical events
that can be set up in the sensor’s configuration register.
EVENT# has three defined modes of operation: interrupt mode, compare mode, and
critical temperature mode. The open-drain output of EVENT# under the three separate
operating modes is illustrated below. Event thresholds are programmed in the 0x01 reg-
16GB (x72, ECC, QR x8) 240-Pin DDR3L LRDIMM
Temperature Sensor with Serial Presence-Detect EEPROM
PDF: 09005aef846600e0
kszf36c2gx72ldz.pdf - Rev. F 9/15 EN
18
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.

MT36KSZF1G72LDZ-1G4M1A5

Mfr. #:
Manufacturer:
Micron
Description:
MODULE DDR3L SDRAM 8GB 240LRDIMM
Lifecycle:
New from this manufacturer.
Delivery:
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