Operating modes M48T512Y, M48T512V
10/23 Doc ID 5747 Rev 7
Table 4. WRITE mode AC characteristics
2.3 Data retention mode
With valid V
CC
applied, the M48T512Y/V operates as a conventional BYTEWIDE™ static
RAM. Should the supply voltage decay, the RAM will automatically deselect, write protecting
itself when V
CC
falls between V
PFD
(max) and V
PFD
(min). All outputs become high
impedance and all inputs are treated as “Don't care.”
Note: A power failure during a WRITE cycle may corrupt data at the current addressed location,
but does not jeopardize the rest of the RAM's content. At voltages below V
PFD
(min), the
memory will be in a write protected state, provided the V
CC
fall time is not less than t
F
. The
M48T512Y/V may respond to transient noise spikes on V
CC
that cross into the deselect
window during the time the device is sampling V
CC
.Therefore, decoupling of the power
supply lines is recommended. When V
CC
drops below V
SO
, the control circuit switches
power to the internal battery, preserving data and powering the clock. The internal energy
source will maintain data in the M48T512Y/V for an accumulated period of at least 10 years
at room temperature. As system power rises above V
SO
, the battery is disconnected, and
the power supply is switched to external V
CC
. Write protection continues until V
CC
reaches
V
PFD
(min) plus t
REC
(min). Normal RAM operation can resume t
REC
after V
CC
exceeds
V
PFD
(max). Refer to application note (AN1012) on the ST website for more information on
battery life.
Symbol Parameter
(1)
1. Valid for ambient operating temperature: T
A
= 0 to 70 °C; V
CC
= 4.5 to 5.5 V or 3.0 to 3.6 V (except where noted).
M48T512Y M48T512V
Unit-70 -85
Min Max Min Max
t
AVAV
WRITE cycle time 70 85 ns
t
AVWL
Address valid to WRITE enable low 0 0 ns
t
AVEL
Address valid to chip enable low 0 0 ns
t
WLWH
WRITE enable pulse width 50 60 ns
t
ELEH
Chip enable low to chip enable high 55 65 ns
t
WHAX
WRITE enable high to address transition 5 5 ns
t
EHAX
Chip enable high to address transition 10 15 ns
t
DVWH
Input valid to WRITE enable high 30 35 ns
t
DVEH
Input valid to chip enable high 30 35 ns
t
WHDX
WRITE enable high to input transition 5 5 ns
t
EHDX
Chip enable high to input transition 10 15 ns
t
WLQZ
(2)(3)
2. C
L
= 5pF.
3. If E
goes low simultaneously with W going low, the outputs remain in the high impedance state.
WRITE enable low to output Hi-Z 25 30 ns
t
AVWH
Address valid to write enable high 60 70 ns
t
AVEH
Address valid to chip enable high 60 70 ns
t
WHQX
(2)(3)
WRITE enable high to output transition 5 5 ns
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