PESDXL4UF_G_W_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 28 February 2008 4 of 17
NXP Semiconductors
PESDxL4UF/G/W
Low capacitance unidirectional quadruple ESD protection diode arrays
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2] For PESDxL4UF measured from pin 1, 3, 4 or 6 to pin 2 or 5.
[3] For PESDxL4UG and PESDxL4UW measured from pin 1, 3, 4 or 5 to pin 2.
[1] Device stressed with ten non-repetitive ESD pulses.
[2] For PESDxL4UF measured from pin 1, 3, 4 or 6 to pin 2 or 5.
[3] For PESDxL4UG and PESDxL4UW measured from pin 1, 3, 4 or 5 to pin 2.
I
ZSM
non-repetitive peak reverse
current
square wave;
t
p
=1ms
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
- 0.9 A
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
- 0.8 A
P
ZSM
non-repetitive peak reverse
power dissipation
square wave;
t
p
=1ms
-6W
Per device
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
Table 7. ESD maximum ratings
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Max Unit
Per diode
V
ESD
electrostatic discharge voltage IEC 61000-4-2
(contact discharge)
[1][2][3]
-20kV
MIL-STD-883 (human
body model)
-10kV
Table 8. ESD standards compliance
Standard Conditions
Per diode
IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3 (human body model) > 4 kV
Table 6. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
