PESDXL4UF_G_W_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 28 February 2008 7 of 17
NXP Semiconductors
PESDxL4UF/G/W
Low capacitance unidirectional quadruple ESD protection diode arrays
T
amb
=25°C
(1) PESD3V3L4UF; PESD3V3L4UG; PESD3V3L4UW
(2) PESD5V0L4UF; PESD5V0L4UG; PESD5V0L4UW
T
amb
=25°C
(1) PESD3V3L4UF; PESD3V3L4UG; PESD3V3L4UW
(2) PESD5V0L4UF; PESD5V0L4UG; PESD5V0L4UW
Fig 3. Non-repetitive peak reverse current as a
function of pulse duration; maximum values
Fig 4. Non-repetitive peak reverse power dissipation
as a function of pulse duration; maximum
values
f = 1 MHz; T
amb
=25°C
(1) PESD3V3L4UF; PESD3V3L4UG; PESD3V3L4UW
(2) PESD5V0L4UF; PESD5V0L4UG; PESD5V0L4UW
Fig 5. Diode capacitance as a function of reverse
voltage; typical values
Fig 6. Relative variation of reverse current as a
function of junction temperature; typical values
006aab134
t
p
(ms)
10
−2
10110
−1
1
10
I
ZSM
(A)
10
−1
(1)
(2)
006aab135
t
p
(ms)
10
−2
10110
−1
10
10
2
P
ZSM
(W)
1
(1)
(2)
006aab136
V
R
(V)
054231
14
18
10
22
26
C
d
(pF)
6
(1)
(2)
006aab137
T
j
(°C)
−75 −25 17512525 75
1
10
10
−1
I
R
I
R(25°C)
