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MT8JTF51264AZ-1G6E1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR3 component data sheets.
Component specifications are available on Micron’s web site. Module speed grades cor-
relate with component speed grades, as shown below.
Table 11: Module and Component Speed Grades
DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade Component Speed Grade
-2G1 -093
-1G9 -107
-1G6 -125
-1G4 -15E
-1G1 -187E
-1G0 -187
-80C -25E
-80B -25
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level.
Micron encourages designers to simulate the signal characteristics of the system's
memory bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
1GB, 2GB, 4GB (x64, SR) 240-Pin DDR3 UDIMM
DRAM Operating Conditions
PDF: 09005aef837d3ecf
jtf8c128_256_512x64az.pdf - Rev. H 04/13 EN
10
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
I
DD
Specifications
Table 12: DDR3 I
DD
Specifications and Conditions – 1GB (Die Revision G)
Values are for the MT41J128M8 DDR3 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com-
ponent data sheet
Parameter Symbol 1866 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
560 560 520 480 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE I
DD1
720 720 680 640 mA
Precharge power-down current: Slow exit I
DD2P0
96 96 96 96 mA
Precharge power-down current: Fast exit I
DD2P1
280 240 240 200 mA
Precharge quiet standby current I
DD2Q
360 320 280 280 mA
Precharge standby current I
DD2N
400 360 320 280 mA
Precharge standby ODT current I
DD2NT
480 440 400 360 mA
Active power-down current I
DD3P
280 280 240 240 mA
Active standby current I
DD3N
400 360 320 320 mA
Burst read operating current I
DD4R
1240 1120 1000 840 mA
Burst write operating current I
DD4W
1280 1160 1000 880 mA
Refresh current I
DD5B
1400 1360 1320 1280 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
64 64 64 64 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
80 80 80 80 mA
All banks interleaved read current I
DD7
2080 1960 1880 1560 mA
Reset current I
DD8
112 112 112 112 mA
1GB, 2GB, 4GB (x64, SR) 240-Pin DDR3 UDIMM
I
DD
Specifications
PDF: 09005aef837d3ecf
jtf8c128_256_512x64az.pdf - Rev. H 04/13 EN
11
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Table 13: DDR3 I
DD
Specifications and Conditions – 2GB (Die Revision D)
Values are for the MT41J256M8 DDR3 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8) com-
ponent data sheet.
Parameter Symbol 1866 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
840 760 680 600 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE I
DD1
880 840 800 760 mA
Precharge power-down current: Slow exit I
DD2P0
96 96 96 96 mA
Precharge power-down current: Fast exit I
DD2P1
320 280 240 200 mA
Precharge quiet standby current I
DD2Q
360 320 280 240 mA
Precharge standby current I
DD2N
376 336 296 256 mA
Precharge standby ODT current I
DD2NT
440 400 360 320 mA
Active power-down current I
DD3P
360 320 280 240 mA
Active standby current I
DD3N
400 360 320 280 mA
Burst read operating current I
DD4R
1600 1440 1280 1120 mA
Burst write operating current I
DD4W
1640 1480 1320 1160 mA
Refresh current I
DD5B
1760 1720 1600 1520 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
96 96 96 96 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
120 120 120 120 mA
All banks interleaved read current I
DD7
3880 3480 3080 2680 mA
Reset current I
DD8
112 112 112 112 mA
1GB, 2GB, 4GB (x64, SR) 240-Pin DDR3 UDIMM
I
DD
Specifications
PDF: 09005aef837d3ecf
jtf8c128_256_512x64az.pdf - Rev. H 04/13 EN
12
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

MT8JTF51264AZ-1G6E1

Mfr. #:
Buy MT8JTF51264AZ-1G6E1
Manufacturer:
Micron
Description:
MODULE DDR3 SDRAM 4GB 240UDIMM
Lifecycle:
New from this manufacturer.
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