Table 14: DDR3 I
DD
Specifications and Conditions – 2GB (Die Revision M)
Values are for the MT41J256M8 DDR3 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8) com-
ponent data sheet.
Parameter Symbol 1866 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
600 560 520 480 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE I
DD1
680 640 600 560 mA
Precharge power-down current: Slow exit I
DD2P0
96 96 96 96 mA
Precharge power-down current: Fast exit I
DD2P1
336 296 256 216 mA
Precharge quiet standby current I
DD2Q
360 320 280 240 mA
Precharge standby current I
DD2N
284 344 304 264 mA
Precharge standby ODT current I
DD2NT
400 360 320 280 mA
Active power-down current I
DD3P
440 400 360 320 mA
Active standby current I
DD3N
480 440 400 360 mA
Burst read operating current I
DD4R
1368 1248 1128 1040 mA
Burst write operating current I
DD4W
1280 1160 1040 920 mA
Refresh current I
DD5B
1600 1560 1520 1480 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
96 96 96 96 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
120 120 120 120 mA
All banks interleaved read current I
DD7
2040 1920 1800 1680 mA
Reset current I
DD8
112 112 112 112 mA
1GB, 2GB, 4GB (x64, SR) 240-Pin DDR3 UDIMM
I
DD
Specifications
PDF: 09005aef837d3ecf
jtf8c128_256_512x64az.pdf - Rev. H 04/13 EN
13
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Table 15: DDR3 I
DD
Specifications and Conditions – 2GB (Die Revision K)
Values are for the MT41J256M8 DDR3 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8) com-
ponent data sheet.
Parameter Symbol 1866 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
344 336 328 312 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE I
DD1
464 448 432 400 mA
Precharge power-down current: Slow exit I
DD2P0
96 96 96 96 mA
Precharge power-down current: Fast exit I
DD2P1
120 120 120 120 mA
Precharge quiet standby current I
DD2Q
176 176 176 176 mA
Precharge standby current I
DD2N
184 184 184 184 mA
Precharge standby ODT current I
DD2NT
288 272 256 232 mA
Active power-down current I
DD3P
176 176 176 176 mA
Active standby current I
DD3N
296 280 264 248 mA
Burst read operating current I
DD4R
880 800 704 600 mA
Burst write operating current I
DD4W
912 824 728 632 mA
Refresh current I
DD5B
1472 1456 1448 1432 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
96 96 96 96 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
120 120 120 120 mA
All banks interleaved read current I
DD7
1368 1304 1256 1024 mA
Reset current I
DD8
112 112 112 112 mA
1GB, 2GB, 4GB (x64, SR) 240-Pin DDR3 UDIMM
I
DD
Specifications
PDF: 09005aef837d3ecf
jtf8c128_256_512x64az.pdf - Rev. H 04/13 EN
14
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Table 16: DDR3 I
DD
Specifications and Conditions – 4GB (Die Revision E)
Values are for the MT41J512M8 DDR3 SDRAM only and are computed from values specified in the 4Gb (512 Meg x 8) com-
ponent data sheet.
Parameter Symbol 1866 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
496 440 376 352 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE I
DD1
560 528 496 472 mA
Precharge power-down current: Slow exit I
DD2P0
144 144 144 144 mA
Precharge power-down current: Fast exit I
DD2P1
296 256 224 208 mA
Precharge quiet standby current I
DD2Q
280 256 224 216 mA
Precharge standby current I
DD2N
280 256 232 224 mA
Precharge standby ODT current I
DD2NT
336 312 280 256 mA
Active power-down current I
DD3P
328 304 280 256 mA
Active standby current I
DD3N
328 304 280 256 mA
Burst read operating current I
DD4R
1392 1256 1120 984 mA
Burst write operating current I
DD4W
1128 1000 880 760 mA
Refresh current I
DD5B
1936 1880 1824 1792 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
160 160 160 160 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
200 200 200 200 mA
All banks interleaved read current I
DD7
2008 1760 1520 1280 mA
Reset current I
DD8
160 160 160 160 mA
1GB, 2GB, 4GB (x64, SR) 240-Pin DDR3 UDIMM
I
DD
Specifications
PDF: 09005aef837d3ecf
jtf8c128_256_512x64az.pdf - Rev. H 04/13 EN
15
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.

MT8JTF51264AZ-1G6E1

Mfr. #:
Manufacturer:
Micron
Description:
MODULE DDR3 SDRAM 4GB 240UDIMM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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