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IR3506MTRPBF

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21
IR3506
Page 1 of 21 V3.02
DATA SHEET
XPHASE3
TM
DDR & VTT PHASE IC
DESCRIPTION
The IR3506 Phase IC combined with IR3522 xPHASE3
TM
Control ICs implements a full featured DDR3 power
solution. The IR3522 provides control functions for both the VDDR and VTT power rails and interfaces with any
number of IR3506 Phase ICs each driving and monitoring a single phase to power any number of DDR3
DIMMs. The xPHASE3
TM
architecture delivers a power supply that is smaller, more flexible, and easier to
design while providing higher efficiency than conventional approaches.
FEATURES
• Power State Indicator (PSI) interface provides the capability to maximize efficiency at light loads
• Anti-bias circuitry
• 7V/2A gate drivers (4A GATEL sink current)
• Support loss-less inductor current sensing
• Phase delay DFF bypassed during PSI assertion mode to improve output ripple performance
• Over-current protection during PSI assertion mode operation
• Integrated boot-strap synchronous PFET
• Only four IC related external components per phase
• 3 wire analog bus connects Control and Phase ICs (VDAC, Error Amp, IOUT)
• 3 wire digital bus for accurate daisy-chain phase timing control without external components
• Debugging function isolates phase IC from the converter
• Self-calibration of PWM ramp, current sense amplifier, and current share amplifier
• Single-wire bidirectional average current sharing
• Soft-stop turn-off to insure VDDR and Vtt tracking
• Small thermally enhanced 16L 3 x 3mm MLPQ package
• RoHS Compliant
APPLICATION CIRCUIT
CCS
CVCCL
CSIN-
15
PSI
13
EAIN
16
IOUT
1
SW
12
GATEH
11
BOOST
10
CSIN+
14
DACIN
2
CLKIN
6
PHSIN
4
PHSOUT
5
GATEL
8
PGND
7
VCCL
9
LGND
3
IR3506
PHASE
IC
U1
CBST
RCS
U12
CIN
U11
L
VOUT-
VOUT+
12V
VCCL
7 Wire
Bus to
Control
IC
COUT
IR3506
Page 2 of 21 V3.02
ORDERING INFORMATION
Part Number Package Order Quantity
IR3506MTRPBF 16 Lead MLPQ
(3 x 3 mm body)
3000 per reel
* IR3506MPBF 16 Lead MLPQ
(3 x 3 mm body)
100 piece strips
* Samples only
ABSOLUTE MAXIMUM RATINGS
Stresses beyond those listed below may cause permanent damage to the device. These are stress ratings only
and functional operation of the device at these or any other conditions beyond those indicated in the operational
sections of the specifications are not implied.
Operating Junction Temperature…………….. 0
o
C to 150
o
C
Storage Temperature Range………………….-65
o
C to 150
o
C
MSL Rating………………………………………2
Reflow Temperature…………………………….260
o
C
Note:
1. Maximum GATEH – SW = 8V
2. Maximum BOOST – GATEH = 8V
PIN # PIN NAME V
MAX
V
MIN
I
SOURCE
I
SINK
1 IOUT 8V -0.3V 1mA 1mA
2 DACIN 3.3V -0.3V 1mA 1mA
3 LGND n/a n/a n/a n/a
4 PHSIN 8V -0.3V 1mA 1mA
5 PHSOUT 8V -0.3V 2mA 2mA
6 CLKIN 8V -0.3V 1mA 1mA
7 PGND 0.3V -0.3V 5A for 100ns,
200mA DC
n/a
8 GATEL 8V -0.3V DC, -5V for
100ns
5A for 100ns,
200mA DC
5A for 100ns,
200mA DC
9 VCCL 8V -0.3V n/a 5A for 100ns,
200mA DC
10 BOOST 40V -0.3V 1A for 100ns,
100mA DC
3A for 100ns,
100mA DC
11 GATEH 40V -0.3V DC, -5V for
100ns
3A for 100ns,
100mA DC
3A for 100ns,
100mA DC
12 SW 34V -0.3V DC, -5V for
100ns
3A for 100ns,
100mA DC
n/a
13 PSI 8V -0.3V 1mA 1mA
14 CSIN+ 8V -0.3V 1mA 1mA
15 CSIN- 8V -0.3V 1mA 1mA
16 EAIN 8V -0.3V 1mA 1mA
IR3506
Page 3 of 21 V3.02
RECOMMENDED OPERATING CONDITIONS FOR RELIABLE OPERATION WITH MARGIN
4.75V ≤
V
CCL
≤ 7.5V, 0.5V ≤ V(DACIN) ≤ 1.6V, 250kHz ≤ CLKIN ≤ 9MHz, 250kHz ≤ PHSIN ≤1.5MHz, 0
o
C ≤ T
J
≤
125
o
C
ELECTRICAL CHARACTERISTICS
The electrical characteristics table list the spread of critical values that are guaranteed to be within the
recommended operating conditions (unless otherwise specified). Typical values represent the median values, which
are related to 25°C. C
GATEH
= 3.3nF, C
GATEL
= 6.8nF (unless otherwise specified).
PARAMETER TEST CONDITION MIN TYP MAX UNIT
Gate Drivers
GATEH Source Resistance BOOST – SW = 7V. Note 1 1.0 2.5 Ω
GATEH Sink Resistance BOOST – SW = 7V. Note 1 1.0 2.5 Ω
GATEL Source Resistance VCCL – PGND = 7V. Note 1 1.0 2.5 Ω
GATEL Sink Resistance VCCL – PGND = 7V. Note 1 0.4 1.0 Ω
GATEH Source Current
BOOST=7V, GATEH=2.5V, SW=0V. 2.0 A
GATEH Sink Current
BOOST=7V, GATEH=2.5V, SW=0V. 2.0 A
GATEL Source Current
VCCL=7V, GATEL=2.5V, PGND=0V. 2.0 A
GATEL Sink Current
VCCL=7V, GATEL=2.5V, PGND=0V. 4.0 A
GATEH Rise Time BOOST – SW = 7V, measure 1V to 4V
transition time
5 10 ns
GATEH Fall Time BOOST - SW = 7V, measure 4V to 1V
transition time
5 10 ns
GATEL Rise Time VCCL – PGND = 7V, Measure 1V to 4V
transition time
10 20 ns
GATEL Fall Time VCCL – PGND = 7V, Measure 4V to 1V
transition time
5 10 ns
GATEL low to GATEH high
delay
BOOST = VCCL = 7V, SW = PGND = 0V,
measure time from GATEL falling to 1V to
GATEH rising to 1V
10 20 40 ns
GATEH low to GATEL high
delay
BOOST = VCCL = 7V, SW = PGND = 0V,
measure time from GATEH falling to 1V to
GATEL rising to 1V
10 20 40 ns
Disable Pull-Down
Resistance
Note 1 30 80 130 kΩ
Clock
CLKIN Threshold Compare to V(VCCL) 45 %
CLKIN Bias Current CLKIN = V(VCCL) -0.5 0.0 0.5
µA
CLKIN Phase Delay Measure time from CLKIN<1V to
GATEH>1V
40 75 125 ns
PHSIN Threshold Compare to V(VCCL) 35 50 55 %
PHSOUT Propagation
Delay
Measure time from CLKIN > (VCCL * 50% )
to PHSOUT > (VCCL *50%). 10pF @125
o
C
4 15 35 ns
PHSIN Pull-Down
Resistance
30 100 170 kΩ
PHSOUT High Voltage I(PHSOUT) = -10mA, measure VCCL –
PHSOUT
1 0.6 V
PHSOUT Low Voltage I(PHSOUT) = 10mA 0.4 1 V
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21

IR3506MTRPBF

Mfr. #:
Buy IR3506MTRPBF
Manufacturer:
Infineon Technologies
Description:
Power Management Specialized - PMIC XPHASE3 DDR VTT 7V 2A 3 Wire
Lifecycle:
New from this manufacturer.
Delivery:
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