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1787454

P1-P3P4-P6P7-P9P10-P12P13-P15
ACT108W-800E
AC Thyristor power switch
3 March 2017 Product data sheet
1. General description
AC Thyristor power switch in a SOT223 surface-mountable plastic package with self-protective
capabilities against low and high energy transients.
2. Features and benefits
• Common terminal on mounting base allows multiple ACTs on shared cooling pad
• Exclusive negative gate triggering
• Full cycle AC conduction
• High voltage capability
• Remote gate separates the gate driver from the effects of the load current
• Safe clamping of low energy over-voltage transients
• Self-protective turn-on during high energy voltage transients
• Surface-mountable package
• Very high noise immunity
3. Applications
• Fan motor circuits
• Pump motor circuits
• Lower-power highly inductive, resistive and safety loads
• Contactors, circuit breakers, valves, dispensers and door locks
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DRM
repetitive peak off-
state voltage
- - 800 V
I
T(RMS)
RMS on-state current full sine wave; T
sp
≤ 112 °C; Fig. 1;
Fig. 2; Fig. 3
- - 0.8 A
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; Fig. 4; Fig. 5
- - 13 AI
TSM
non-repetitive peak on-
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
- - 14.3 A
T
j
junction temperature - - 125 °C
V
PP
peak pulse voltage T
j
= 25 °C; non-repetitive, off-state; ten
pulses on each voltage polarity; 20s
or more between successive pulses;
Fig. 6
- - 2.5 kV
Static characteristics
WeEn Semiconductors
ACT108W-800E
AC Thyristor power switch
ACT108W-800E All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet 3 March 2017 2 / 15
Symbol Parameter Conditions Min Typ Max Unit
V
D
= 12 V; I
T
= 100 mA; LD+ G-;
T
j
= 25 °C; Fig. 10
1 - 10 mAI
GT
gate trigger current
V
D
= 12 V; I
T
= 100 mA; LD- G-;
T
j
= 25 °C; Fig. 10
1 - 10 mA
I
H
holding current V
D
= 12 V; T
j
= 25 °C; Fig. 12 - - 20 mA
V
T
on-state voltage I
T
= 1.1 A; T
j
= 25 °C; Fig. 13 - - 1.3 V
V
CL
clamping voltage I
CL
= 0.1 mA; t
p
= 1 ms; T
j
= 25 °C 850 - - V
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 536 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit; Fig. 15
500 - - V/µs
dI
com
/dt rate of change of
commutating current
V
D
= 400 V; T
j
= 125 °C;
I
T(RMS)
= 0.8 A; dV
com
/dt = 20 V/µs;
(snubberless condition); gate open
circuit; Fig. 16; Fig. 17
0.5 - - A/ms
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 LD load
2 CM common
3 G gate
4 CM common
1 32
4
SC-73 (SOT223)
001aaj924
G
CM
LD
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
ACT108W-800E SC-73 plastic surface-mounted package with increased heatsink; 4
leads
SOT223
WeEn Semiconductors
ACT108W-800E
AC Thyristor power switch
ACT108W-800E All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet 3 March 2017 3 / 15
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state
voltage
- 800 V
I
T(RMS)
RMS on-state current full sine wave; T
sp
≤ 112 °C; Fig. 1; Fig. 2;
Fig. 3
- 0.8 A
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig. 4; Fig. 5
- 13 AI
TSM
non-repetitive peak on-
state current
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms - 14.3 A
I
2
t I
2
t for fusing t
p
= 10 ms; sine-wave pulse - 0.84 A²s
dI
T
/dt rate of rise of on-state
current
I
G
= 20 mA - 100 A/µs
I
GM
peak gate current t = 20 μs - 1 A
V
GM
peak gate voltage positive applied gate voltage - 15 V
P
G(AV)
average gate power over any 20 ms period - 0.1 W
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 125 °C
V
PP
peak pulse voltage T
j
= 25 °C; non-repetitive, off-state; ten
pulses on each voltage polarity; 20s or
more between successive pulses; Fig. 6
- 2.5 kV
003aac807
0
0.2
0.4
0.6
0.8
1
- 50 0 50 100 150
T
sp
(°C)
I
T(RMS)
(A)
Fig. 1. RMS on-state current as a function of solder
point temperature; maximum values
10
-2
10
-1
1 10
0
surge duration (s)
I
T(RMS)
(A)
aaa-013407
f = 50 Hz
T
sp
= 112 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
P1-P3P4-P6P7-P9P10-P12P13-P15

1787454

Mfr. #:
Buy 1787454
Manufacturer:
Phoenix Contact
Description:
Pluggable Terminal Blocks 8 Pos 3.5mm Dbl Row Through Hole Header
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