Expand menu
Hello, Sign in
My Account
0
Cart
Home
Products
Sensors
Semiconductors
Passive Components
Connectors
Power
Electromechanical
Optoelectronics
Circuit Protection
Integrated Circuits - ICs
Main Products
Manufacturers
Blog
Services
About OMO
About Us
Contact Us
Check Stock
1787454
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
WeEn Semiconductors
ACT108W-800E
AC Thyristor power switch
ACT108W-800E
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
3 March 2017
7 / 15
001aab508
3.8 min
1.5
min
1.5
min
(3×)
2.3
4.6
6.3
1.5
min
All dimensions are in mm
Fig. 8. Minimum footprint SOT223
001aab509
7
4.6
15
36
9
10
18
4.5
60
50
All dimensions are in mm
Printed circuit board:
FR4 epoxy glass (1.6 mm thick), copper laminate
(35 um thick)
Fig. 9. Printed circuit board pad area: SOT223
WeEn Semiconductors
ACT108W-800E
AC Thyristor power switch
ACT108W-800E
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
3 March 2017
8 / 15
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V
D
= 12 V; I
T
= 100 mA; LD+ G-;
T
j
= 25 °C;
Fig. 10
1
-
10
mA
I
GT
gate trigger current
V
D
= 12 V; I
T
= 100 mA; LD- G-;
T
j
= 25 °C;
Fig. 10
1
-
10
mA
V
D
= 12 V; I
G
= 100 mA; LD+ G-;
T
j
= 25 °C;
Fig. 11
-
-
25
mA
I
L
latching current
V
D
= 12 V; I
G
= 100 mA; LD- G-;
T
j
= 25 °C;
Fig. 11
-
-
20
mA
I
H
holding current
V
D
= 12 V; T
j
= 25 °C;
Fig. 12
-
-
20
mA
V
T
on-state voltage
I
T
= 1.1 A; T
j
= 25 °C;
Fig. 13
-
-
1.3
V
V
D
= 400 V; I
T
= 100 mA; T
j
= 125 °C;
Fig. 14
0.15
-
-
V
V
GT
gate trigger voltage
V
D
= 12 V; I
T
= 100 mA; T
j
= 25 °C;
Fig. 14
-
-
1
V
V
D
= 800 V; T
j
= 25 °C
-
-
2
µA
I
D
off-state current
V
D
= 800 V; T
j
= 125 °C
-
-
0.2
mA
V
CL
clamping voltage
I
CL
= 0.1 mA; t
p
= 1 ms; T
j
= 25 °C
850
-
-
V
Dynamic characteristics
dV
D
/dt
rate of rise of off-state
voltage
V
DM
= 536 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit;
Fig. 15
500
-
-
V/µs
dI
com
/dt
rate of change of
commutating current
V
D
= 400 V; T
j
= 125 °C;
I
T(RMS)
= 0.8 A; dV
com
/dt = 20 V/µs;
(snubberless condition); gate open
circuit;
Fig. 16
;
Fig. 17
0.5
-
-
A/ms
WeEn Semiconductors
ACT108W-800E
AC Thyristor power switch
ACT108W-800E
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
3 March 2017
9 / 15
T
j
(°C)
-50
150
100
0
50
aaa-01
1245
1
2
3
0
(1)
(2)
I
GT
I
GT(25°C)
(1) LD+ G-
(2) LD- G-
Fig. 10. Normalized gate trigger current as a function of
junction temperature
T
j
(°C)
-50
150
100
0
50
aaa-01
1246
1
2
3
0
I
L
I
L(25°C)
Fig. 11. Normalized latching current as a function of
junction temperature
T
j
(°C)
-50
150
100
0
50
aaa-01
1247
1
2
3
0
I
H
I
H(25°C)
Fig. 12. Normalized holding current as a function of
junction temperature
0
1
2
0
0.6
1.2
1.8
2.4
3
V
F
(V)
I
F
(A)
aaa-011248
(2)
(3)
(1)
V
o
= 1.031 V; R
s
= 0.1488 Ω
(1) T
j
= 125 °C; typical values
(2) T
j
= 125 °C; maximum values
(3) T
j
= 25 °C; maximum values
Fig. 13. On-state current as a function of on-state
voltage
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
1787454
Mfr. #:
Buy 1787454
Manufacturer:
Phoenix Contact
Description:
Pluggable Terminal Blocks 8 Pos 3.5mm Dbl Row Through Hole Header
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
Paypal
Visa
MoneyGram
Western
Union
Products related to this Datasheet
ACT108W-800EF
1787454
