WeEn Semiconductors
ACT108W-800E
AC Thyristor power switch
ACT108W-800E All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet 3 March 2017 10 / 15
T
j
(°C)
-50 1501000 50
aaa-011249
0.8
1.2
1.6
0.4
V
GT
V
GT(25°C)
Fig. 14. Normalized gate trigger voltage as a function of
junction temperature
T
j
(°C)
25 12510050 75
aaa-011250
4
8
12
0
A
B
10
6
2
A = dV
D
/dt at condition T
j
°C
B = dV
D
/dt at condition T
j
[125] °C
Fig. 15. Normalized rate of rise of off-state voltage as a
function of junction temperature
T
j
(°C)
25 12510050 75
aaa-011251
4
8
12
0
A
B
A = dI
com
/dt at condition T
j
°C
B = dI
com
/dt at condition T
j
[125] °C
V
D
= 400 V
Fig. 16. Normalized critical rate of rise of commutating
current as a function of junction temperature
aaa-011252
0
6
12
18
24
10
-1
1 10 10
2
B s)
A [B]
A [spec]
A [B] = dI
com
/dt at condition B, dV
com
/dt
A [spec] is the data sheet value for dI
com
/dt
turn-off time is less than 20 ms
Fig. 17. Normalized critical rate of change of
commutating current as a function of critical rate of
change of commutating voltage; minimum values