IS41LV16100B
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
7
Rev. C
12/11/06
ISSI
®
AC CHARACTERISTICS
(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
-50 -60
Symbol Parameter Min. Max. Min. Max. Units
tRC Random READ or WRITE Cycle Time 85 110 ns
tRAC Access Time from RAS
(6, 7)
—50 —60 ns
tCAC Access Time from CAS
(6, 8, 15)
—14 —15 ns
tAA Access Time from Column-Address
(6)
—25 —30 ns
tRAS RAS Pulse Width 50 10K 60 10K ns
tRP RAS Precharge Time 30 40 ns
tCAS CAS Pulse Width
(26)
8 10K 10 10K ns
tCP CAS Precharge Time
(9, 25)
9— 10 ns
tCSH CAS Hold Time
(21)
50 60 ns
tRCD RAS to CAS Delay Time
(10, 20)
12 37 20 45 ns
tASR Row-Address Setup Time 0 0 ns
tRAH Row-Address Hold Time 8 10 ns
tASC Column-Address Setup Time
(20)
0— 0— ns
tCAH Column-Address Hold Time
(20)
8— 10 ns
tAR Column-Address Hold Time 30 40 ns
(referenced to RAS)
tRAD RAS to Column-Address Delay Time
(11)
14 25 15 30 ns
tRAL Column-Address to RAS Lead Time 25 30 ns
tRPC RAS to CAS Precharge Time 5 5 ns
tRSH RAS Hold Time
(27)
14 15 ns
tCLZ CAS to Output in Low-Z
(15, 29)
0— 0— ns
tCRP CAS to RAS Precharge Time
(21)
5— 5— ns
tOD Output Disable Time
(19, 28, 29)
312 312 ns
tOE/tOEA Output Enable Time
(15, 16)
—14 —15 ns
tOEHC OE HIGH Hold Time from CAS HIGH 15 15 ns
tOEP OE HIGH Pulse Width 10 10 ns
tOES OE LOW to CAS HIGH Setup Time 5 5 ns
tRCS Read Command Setup Time
(17, 20)
0— 0— ns
tRRH Read Command Hold Time 0 0 ns
(referenced to RAS)
(12)
tRCH Read Command Hold Time 0 0 ns
(referenced to CAS)
(12, 17, 21)
tWCH Write Command Hold Time
(17, 27)
8— 10 ns
tWCR Write Command Hold Time 40 50 ns
(referenced to RAS)
(17)
IS41LV16100B
8
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
12/11/06
ISSI
®
AC CHARACTERISTICS (Continued)
(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
-50 -60
Symbol Parameter Min. Max. Min. Max. Units
tWP Write Command Pulse Width
(17)
8— 10 ns
tWPZ WE Pulse Widths to Disable Outputs 10 10 ns
tRWL Write Command to RAS Lead Time
(17)
13 15 ns
tCWL Write Command to CAS Lead Time
(17, 21)
8— 15 ns
tWCS Write Command Setup Time
(14, 17, 20)
0— 0— ns
tDHR Data-in Hold Time (referenced to RAS)39—40ns
tOEH OE Hold Time from WE during 14 15 ns
READ-MODIFY-WRITE cycle
(18)
tDS Data-In Setup Time
(15, 22)
0— 0— ns
tDH Data-In Hold Time
(15, 22)
8— 15 ns
tRWC READ-MODIFY-WRITE Cycle Time 110 155 ns
tRWD RAS to WE Delay Time during 65 85 ns
READ-MODIFY-WRITE Cycle
(14)
tCWD CAS to WE Delay Time
(14, 20)
26 40 ns
tAWD Column-Address to WE Delay Time
(14)
40 55 ns
tPC EDO Page Mode READ or WRITE 30 40 ns
Cycle Time
(24)
tRASP RAS Pulse Width in EDO Page Mode 50 100K 60 100K ns
tCPA Access Time from CAS Precharge
(15)
—30 —35 ns
tPRWC EDO Page Mode READ-WRITE 56 56 ns
Cycle Time
(24)
tCOH Data Output Hold after CAS LOW 5— 5— ns
tOFF Output Buffer Turn-Off Delay from 3 12 3 15 ns
CAS or RAS
(13,15,19, 29)
tWHZ Output Disable Delay from WE 310 315 ns
tCLCH Last CAS going LOW to First CAS 10 10 ns
returning HIGH
(23)
tCSR CAS Setup Time (CBR REFRESH)
(30, 20)
5— 5— ns
tCHR CAS Hold Time (CBR REFRESH)
(30, 21)
8— 10 ns
tORD OE Setup Time prior to RAS during 0 0 ns
HIDDEN REFRESH Cycle
tREF Auto Refresh Period (1,024 Cycles) 16 16 ms
tREF Self Refresh Period (1,024 Cycles) 128 128 ms
tT Transition Time (Rise or Fall)
(2, 3)
350 350 ns
IS41LV16100B
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
9
Rev. C
12/11/06
ISSI
®
Notes:
1. An initial pause of 200 µs is required after power-up followed by eight RAS refresh cycle (RAS-Only or CBR) before proper device
operation is assured. The eight RAS cycles wake-up should be repeated any time the t
REF refresh requirement is exceeded.
2. VIH (MIN) and VIL (MAX) are reference levels for measuring timing of input signals. Transition times, are measured between VIH and
V
IL (or between VIL and VIH) and assume to be 1 ns for all inputs.
3. In addition to meeting the transition rate specification, all input signals must transit between V
IH and VIL (or between VIL and VIH) in a
monotonic manner.
4. If CAS and RAS = V
IH, data output is High-Z.
5. If CAS = V
IL, data output may contain data from the last valid READ cycle.
6. Measured with a load equivalent to one TTL gate and 50 pF.
7. Assumes that t
RCD tRCD (MAX). If tRCD is greater than the maximum recommended value shown in this table, tRAC will increase
by the amount that t
RCD exceeds the value shown.
8. Assumes that tRCD tRCD (MAX).
9. If CAS is LOW at the falling edge of RAS, data out will be maintained from the previous cycle. To initiate a new cycle and clear the data
output buffer, CAS and RAS must be pulsed for t
CP.
10. Operation with the tRCD (MAX) limit ensures that tRAC (MAX) can be met. tRCD (MAX) is specified as a reference point only; if tRCD is
greater than the specified t
RCD (MAX) limit, access time is controlled exclusively by tCAC.
11. Operation within the t
RAD (MAX) limit ensures that tRCD (MAX) can be met. tRAD (MAX) is specified as a reference point only; if tRAD is
greater than the specified tRAD (MAX) limit, access time is controlled exclusively by tAA.
12. Either t
RCH or tRRH must be satisfied for a READ cycle.
13. t
OFF (MAX) defines the time at which the output achieves the open circuit condition; it is not a reference to VOH or VOL.
14. tWCS, tRWD, tAWD and tCWD are restrictive operating parameters in LATE WRITE and READ-MODIFY-WRITE cycle only. If tWCS tWCS
(MIN), the cycle is an EARLY WRITE cycle and the data output will remain open circuit throughout the entire cycle. If tRWD tRWD
(MIN), tAWD tAWD (MIN) and tCWD tCWD (MIN), the cycle is a READ-WRITE cycle and the data output will contain data read from
the selected cell. If neither of the above conditions is met, the state of I/O (at access time and until CAS and RAS or OE go back
to V
IH) is indeterminate. OE held HIGH and WE taken LOW after CAS goes LOW result in a LATE WRITE (OE-controlled) cycle.
15. Output parameter (I/O) is referenced to corresponding CAS input, I/O0-I/O7 by LCAS and I/O8-I/O15 by UCAS.
16. During a READ cycle, if OE is LOW then taken HIGH before CAS goes HIGH, I/O goes open. If OE is tied permanently LOW, a LATE
WRITE or READ-MODIFY-WRITE is not possible.
17. Write command is defined as WE going low.
18. LATE WRITE and READ-MODIFY-WRITE cycles must have both t
OD and tOEH met (OE HIGH during WRITE cycle) in order to ensure
that the output buffers will be open during the WRITE cycle. The I/Os will provide the previously written data if CAS remains LOW and
OE is taken back to LOW after t
OEH is met.
19. The I/Os are in open during READ cycles once tOD or tOFF occur.
20. The first χCAS edge to transition LOW.
21. The last χCAS edge to transition HIGH.
22. These parameters are referenced to CAS leading edge in EARLY WRITE cycles and WE leading edge in LATE WRITE or READ-
MODIFY-WRITE cycles.
23. Last falling χCAS edge to first rising χCAS edge.
24. Last rising χCAS edge to next cycle’s last rising χCAS edge.
25. Last rising χCAS edge to first falling χCAS edge.
26. Each χCAS must meet minimum pulse width.
27. Last χCAS to go LOW.
28. I/Os controlled, regardless UCAS and LCAS.
29. The 3 ns minimum is a parameter guaranteed by design.
30. Enables on-chip refresh and address counters.
AC TEST CONDITIONS
Output load: One TTL Load and 50 pF (VDD = 3.3V ±10%)
Input timing reference levels: VIH = 2.0V, VIL = 0.8V (VDD = 3.3V ±10%)
Output timing reference levels: VOH = 2.0V, VOL = 0.8V

IS41LV16100B-50TLI

Mfr. #:
Manufacturer:
ISSI
Description:
DRAM 16M 1Mx16 50ns 87041LV16100B50TLIT
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New from this manufacturer.
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