STP80NF70 Electrical ratings
Doc ID 17610 Rev 1 3/13
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
= 0) 68 V
V
GS
Gate-source voltage ± 20 V
I
D
Drain current (continuous) at T
C
= 25 °C 98 A
I
D
Drain current (continuous) at T
C
=100 °C 68 A
I
DM
(1)
1. Pulse width limited by safe operating area.
Drain current (pulsed) 392 A
P
TOT
Total dissipation at T
C
= 25 °C 190 W
Derating factor 1.27 W/°C
dv/dt
(2)
2. I
SD
≤ 80 A, di/dt ≤ 300 A/µs, V
DD
≤ V
(BR)DSS
, T
J
≤ T
JMAX.
Peak diode recovery voltage slope 13 V/ns
E
AS
(3)
3. Starting T
J
= 25
o
C, I
D
= 40 A, V
DD
= 34 V.
Single pulse avalanche energy 700 mJ
T
stg
Storage temperature
-55 to 175 °C
T
J
Operating junction temperature
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case max 0.79 °C/W
R
thj-amb
Thermal resistance junction-ambient max 62.5 °C/W
T
l
Maximum lead temperature for soldering
purpose
(1)
1. 1.6 mm from case for 10 sec.
300 °C
