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STP80NF70

P1-P3P4-P6P7-P9P10-P12P13-P13
STP80NF70 Electrical characteristics
Doc ID 17610 Rev 1 7/13
Figure 6. Normalized BV
DSS
vs temperature Figure 7. Static drain-source on resistance
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs temperature
Figure 11. Normalized on resistance vs
temperature
V
BR(DSS)
-50
50
T
J
(°C)
(norm)
0
100
0.8
0.9
1.0
1.1
1.2
V
GS
=0
I
D
=250µA
AM00957v1
R
DS(on)
0
I
D
(A)
(mΩ)
20
7
7.5
8
9
8.5
9.5
40
60
80
AM00951v1
V
GS
0
Q
g
(nC)
(V)
20
0
2
4
8
6
10
40
60
80
12
V
DD
=34V
I
D
=80A
AM00952v1
C(pF)
0
Q
g
(nC)
10
0
1000
2000
4000
3000
5000
20
30
40 50 60
Ciss
Coss
Crss
T
J
=25°C
f=1MHz
AM00953v1
V
GS(th)
-50
50
T
J
(°C)
(norm)
0
100
0.6
0.7
0.8
0.9
1.0
V
DS
=V
GS
I
D
=250µA
AM00954v1
R
DS(on)
-50
50
T
J
(°C)
(norm)
0
100
0.2
0.6
1.0
1.4
1.8
V
GS
=10V
I
D
=40A
AM00955v1
Electrical characteristics STP80NF70
8/13 Doc ID 17610 Rev 1
Figure 12. Source-drain diode forward
characteristics
V
SD
0
40
I
SD
(A)
(V)
20
60
0.3
0.5
0.7
0.9
1.1
T
J
=-55°C
25°C
80
175°C
AM00956v1
STP80NF70 Test circuits
Doc ID 17610 Rev 1 9/13
3 Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 16. Unclamped inductive load test
circuit
Figure 17. Unclamped inductive waveform
P1-P3P4-P6P7-P9P10-P12P13-P13

STP80NF70

Mfr. #:
Buy STP80NF70
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 68V 0.0082 Ohm 98 A STripFET II
Lifecycle:
New from this manufacturer.
Delivery:
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