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STP80NF70
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
Electrical ch
aracteristics
STP80NF70
4/13
Doc ID 17610 Re
v 1
2 Electrical
characteristics
(T
CASE
=25°C unless otherwise specified).
T
ab
le 4.
On/off state
s
Symbol
Pa
rameter
T
est cond
itions Min.
T
yp.
Max.
Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 250
µ
A, V
GS
= 0
68
V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= Max rating,
V
DS
= Max rating @125 °C
1
10
µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ±20 V
±100
n
A
V
GS(th)
Gate threshold v
oltage
V
DS
= V
GS
, I
D
= 250 µA
23
4
V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10 V
, I
D
= 40 A
0.0082
0.0098
Ω
T
ab
le 5.
Dynamic
Symbol
Parameter
T
est conditions
Min.
T
yp.
Max.
Unit
g
fs
(1)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%.
F
orward transconductance
V
DS
= 15 V
, I
D
= 40 A
-6
0
-
S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Re
v
erse tran
sf
er
capacitance
V
DS
=25 V
, f = 1 MHz,
V
GS
= 0
-
2550
550
175
-
pF
pF
pF
Q
g
Q
gs
Q
gd
T
otal gate char
ge
Gate-source charge
Gate-drain charge
V
DD
= 34 V
, I
D
= 80 A
V
GS
=10 V
-
75
17
30
-
nC
nC
nC
T
ab
le 6.
Switching ti
mes
Symbol
P
arameter
T
est conditions
Min.
T
yp.
Max.
Unit
t
d(on)
t
r
t
d(off)
t
f
T
ur
n-on delay time
Rise time
T
ur
n-o
ff delay time
Fa
l
l
t
i
m
e
V
DD
= 34 V
, I
D
= 40 A,
R
G
=4.7
Ω,
V
GS
=10 V
Figure 13 on page 9
-
17
60
90
75
-
ns
ns
ns
ns
STP80NF70
Electrical character
istics
Doc ID 17610 Rev
1
5/13
T
ab
le 7.
Sourc
e drain diode
Symbol
P
arameter
T
est conditions
Min.
T
yp.
Max.
Unit
I
SD
Source-drain current
-
98
A
I
SDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current (pulsed)
-
392
A
V
SD
(2)
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
F
orward on voltage
I
SD
= 80 A, V
GS
= 0
-1
.
5
V
t
rr
Q
rr
I
RRM
Re
verse reco
v
er
y time
Rev
erse recovery charge
Re
verse reco
v
ery current
I
SD
= 80 A,
di/dt = 100 A/µs,
V
DD
= 25 V
, T
J
= 150 °C
Figure 15 on page 9
-
70
160
4.7
ns
nC
A
Electrical ch
aracteristics
STP80NF70
6/13
Doc ID 17610 Re
v 1
2.1 Electrical
characteristics
(curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
Figure 4.
Output c
haracterist
ics
Figure 5.
T
ransfer
characteri
stics
I
D
0.1
10
V
D
S
(V)
(A)
1
0.1
1
10
100
Oper
a
tion in thi
s
a
re
a
i
s
limited
b
y m
a
x R
D
S
(on)
100
µs
1m
s
10m
s
AM009
3
5v
2
I
D
0
10
V
D
S
(V)
(A)
5
0
50
100
200
150
250
15
5V
6V
7V
8
V
V
G
S
=10V
AM009
3
6v1
I
D
5
V
G
S
(V)
(A)
0
50
100
200
150
250
V
D
S
=10V
2
3
4
6
7
8
9
AM009
3
7v1
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
STP80NF70
Mfr. #:
Buy STP80NF70
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 68V 0.0082 Ohm 98 A STripFET II
Lifecycle:
New from this manufacturer.
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