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FGH75T65SQDNL4

P1-P3P4-P6P7-P9P10-P10
© Semiconductor Components Industries, LLC, 2017
May, 2018 − Rev. 0
1 Publication Order Number:
FGH75T65SQDNL4/D
FGH75T65SQDNL4
IGBT - Field Stop IV/4 Lead
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop IV Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss. In addition, this
new device is packaged in a TO−247−4L package that provides
significant reduction in E
on
Losses compared to standard TO−247−3L
package. The IGBT is well suited for UPS and solar applications.
Incorporated into the device is a soft and fast co−packaged free
wheeling diode with a low forward voltage.
Features
• Extremely Efficient Trench with Field Stop Technology
• T
Jmax
= 175°C
• Improved Gate Control Lowers Switching Losses
• Separate Emitter Drive Pin
• TO−247−4L for Minimal E
on
Losses
• Optimized for High Speed Switching
• These are Pb−Free Devices
Typical Applications
• Solar Inverter
• Uninterruptible Power Inverter Supplies (UPS)
• Neutral Point Clamp Topology
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−emitter voltage V
CES
650 V
Collector current
@ T
C = 25°C
@ TC = 100°C
I
C
200
75
A
Diode Forward Current
@ T
C = 25°C
@ TC = 100°C
I
F
200
75
A
Diode Pulsed Current
T
PULSE
Limited by T
J
Max
I
FM
200 A
Pulsed collector current, T
pulse
limited by T
Jmax
I
CM
200 A
Gate−emitter voltage
V
GE
$20
V
V
Transient gate−emitter voltage
(T
PULSE
= 5 ms, D < 0.10)
$30
Power Dissipation
@ T
C = 25°C
@ T
C = 100°C
P
D
375
188
W
Operating junction temperature range T
J
−55 to +175 °C
Storage temperature range T
stg
−55 to +175 °C
Lead temperature for soldering, 1/8″
from case for 5 seconds
T
SLD
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
TO−247−4LD
CASE 340CJ
75 A, 650 V
V
CEsat
= 1.50 V
E
on
= 1.25 mJ
Device Package Shipping
ORDERING INFORMATION
FGH75T65SQDNL4 TO−247
(Pb−Free)
30 Units / Rai
l
www.onsemi.com
MARKING DIAGRAM
G
E
C
E1
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
FGH75T65
SQDNL4
AYWWG
C
E
E1
G
FGH75T65SQDNL4
www.onsemi.com
2
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal resistance junction−to−case, for IGBT
R
q
JC
0.4 °C/W
Thermal resistance junction−to−case, for Diode
R
q
JC
0.65 °C/W
Thermal resistance junction−to−ambient
R
q
JA
40 °C/W
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Test Conditions Symbol Min Typ Max Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
GE
= 0 V, I
C
= 500 mA
V
(BR)CES
650 − − V
Collector−emitter saturation voltage V
GE
= 15 V, I
C
= 75 A
V
GE
= 15 V, I
C
= 75 A, T
J
= 175°C
V
CEsat
−
−
1.43
1.73
2.1
−
V
Gate−emitter threshold voltage
V
GE
= V
CE
, I
C
= 250 mA
V
GE(th)
3.6 4.0 4.35 V
Collector−emitter cut−off current, gate−
emitter short−circuited
V
GE
= 0 V, V
CE
= 650 V
V
GE
= 0 V, V
CE
= 650 V, T
J
=
175°C
I
CES
−
−
−
6.0
0.25
−
mA
Gate leakage current, collector−emitter
short−circuited
V
GE
= 20 V , V
CE
= 0 V I
GES
− − ±250 nA
DYNAMIC CHARACTERISTIC
Input capacitance
V
CE
= 30 V, V
GE
= 0 V, f = 1 MHz
C
ies
− 5100 −
pF
Output capacitance C
oes
− 115 −
Reverse transfer capacitance C
res
− 12 −
Gate charge total
V
CE
= 400 V, I
C
= 75 A, V
GE
= 15 V
Q
g
− 152 −
nC
Gate to emitter charge Q
ge
− 29 −
Gate to collector charge Q
gc
− 39 −
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
T
J
= 25°C
V
CC
= 400 V, I
C
= 75 A
R
g
= 10 W
V
GE
= 15 V
t
d(on)
− 44 −
ns
Rise time t
r
− 49 −
Turn−off delay time t
d(off)
− 208 −
Fall time t
f
− 66 −
Turn−on switching loss E
on
− 1.25 −
mJ
Turn−off switching loss E
off
− 1.26 −
Total switching loss E
ts
− 2.51 −
Turn−on delay time
T
J
= 175°C
V
CC
= 400 V, I
C
= 75 A
R
g
= 10 W
V
GE
= 15 V
t
d(on)
− 45 −
ns
Rise time t
r
− 54 −
Turn−off delay time t
d(off)
− 227 −
Fall time t
f
− 70 −
Turn−on switching loss E
on
− 1.82 −
mJ
Turn−off switching loss E
off
− 1.42 −
Total switching loss E
ts
− 3.24 −
DIODE CHARACTERISTIC
Forward voltage
V
GE
= 0 V, I
F
= 75 A
V
GE
= 0 V, I
F
= 75 A, T
J
= 175°C
V
F
−
−
1.60
1.70
2.0
−
V
Reverse recovery time
T
J
= 25°C
I
F
= 75 A, V
R
= 200 V
di
F
/dt = 200 A/ms
t
rr
− 134 − ns
Reverse recovery charge Q
rr
− 0.78 −
mC
Reverse recovery current I
rrm
− 10 − A
Reverse recovery time
T
J
= 175°C
I
F
= 75 A, V
R
= 200 V
di
F
/dt = 200 A/ms
t
rr
− 202 − ns
Reverse recovery charge Q
rr
− 2.54 −
mC
Reverse recovery current I
rrm
− 20.2 − A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
FGH75T65SQDNL4
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Output Characteristics Figure 2. Output Characteristics
V
CE
, COLLECTOR−EMITTER VOLTAGE (V) V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
76543210
0
20
40
60
80
100
76543210
0
20
40
60
100
Figure 3. Output Characteristics Figure 4. Output Characteristics
V
CE
, COLLECTOR−EMITTER VOLTAGE (V) V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
76543210
0
20
40
60
100
76543210
0
20
40
60
100
Figure 5. Typical Transfer Characteristics Figure 6. V
CE(sat)
vs. T
J
V
GE
, GATE−EMITTER VOLTAGE (V) T
J
, JUNCTION TEMPERATURE (°C)
7653210
0
20
40
60
80
100
1751257525−25−75
1.0
1.2
1.5
1.6
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
9
6 V
5.5 V
5 V
T
J
= 25°C
V
GE
=
20 V − 9 V
7 V
T
J
= 150°C
V
GE
= 20 V − 9 V
T
J
= −55°C
V
GE
=
20 V − 9 V
T
J
= 175°C
V
GE
=
20 V − 9 V
8
80
8
80
8
80
T
J
= 25°C
T
J
= 175°C
4
I
C
= 75 A
1.1
1.3
I
C
= 50 A
I
C
= 25 A
−50 0 200150100508
120
140
160
120
140
160
120
160
140
120
160
140
1.8
6.5 V
120
140
160
1.4
8
910
1.7
7 V
6 V
5.5 V
6.5 V
6 V
5.5 V
5 V
6.5 V
7 V
7 V
6 V
5.5 V
6.5 V
5 V
P1-P3P4-P6P7-P9P10-P10

FGH75T65SQDNL4

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Manufacturer:
ON Semiconductor
Description:
IGBT Transistors 650V/75 FAST IGBT
Lifecycle:
New from this manufacturer.
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