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FGH75T65SQDNL4

P1-P3P4-P6P7-P9P10-P10
FGH75T65SQDNL4
www.onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 7. Typical Capacitance Figure 8. Diode Forward Characteristics
V
CE
, COLLECTOR−EMITTER VOLTAGE (V) V
F
, FORWARD VOLTAGE (V)
908060504020100
1
100
1K
3.02.52.01.51.00.50
0
10
30
40
60
70
80
100
Figure 9. Typical Gate Charge Figure 10. Switching Loss vs. Temperature
Q
G
, GATE CHARGE (nC) T
J
, JUNCTION TEMPERATURE (°C)
1608060200
0
2
6
8
10
14
16
1801401201006040200
0.4
1.0
1.2
1.6
1.8
Figure 11. Switching Time vs. Temperature Figure 12. Switching Loss vs. IC
T
J
, JUNCTION TEMPERATURE (°C) I
C
, COLLECTOR CURRENT (A)
1801601201006040200
1
10
100
1000
1501301109070503010
0
4
6
CAPACITANCE (pF)
I
F
, FORWARD CURRENT (A)
V
GE
, GATE−EMITTER VOLTAGE (V)
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
30 70 100
T
J
= 25°C
C
oes
C
ies
C
res
20
50
90
T
J
= 25°C
T
J
= 175°C
4
12
V
CE
= 400 V
V
GE
= 15 V
I
C
= 75 A
80 160 200
V
CE
= 400 V
V
GE
= 15 V
I
C
= 75 A
Rg = 10 W
E
off
E
on
V
CE
= 400 V
V
GE
= 15 V
T
J
= 175°C
Rg = 10 W
E
off
E
on
170
3
80 140 200
V
CE
= 400 V
V
GE
= 15 V
I
C
= 75 A
Rg = 10 W
t
d(off)
t
d(on)
t
r
t
f
40 100 120
0.6
10K
100K
1
2
5
0.8
1.4
140
10
FGH75T65SQDNL4
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5
TYPICAL CHARACTERISTICS
Figure 13. Switching Time vs. IC Figure 14. Switching Loss vs. R
G
I
C
, COLLECTOR CURRENT (A)
R
G
, GATE RESISTOR (W)
1501301109070503010
1
10
100
1000
605040 703020100
0
2
4
6
8
10
Figure 15. Switching Time vs. R
G
Figure 16. Switching Loss vs. V
CE
R
G
, GATE RESISTOR (W)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
60 7050403020100
10
100
1000
550500450400300250200150
0
1.0
1.5
2.0
Figure 17. Switching Time vs. V
CE
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
500450400350300250200150
10
100
1000
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
V
CE
= 400 V
V
GE
= 15 V
T
J
= 175°C
Rg = 10 W
E
off
E
on
t
d(off)
t
d(on)
t
r
t
f
170
V
CE
= 400 V
V
GE
= 15 V
T
J
= 175°C
I
C
= 75 A
12
350 600
E
off
E
on
V
GE
= 15 V
T
J
= 175°C
I
C
= 75 A
Rg = 10 W
V
CE
= 400 V
V
GE
= 15 V
T
J
= 175°C
I
C
= 75 A
t
d(off)
t
d(on)
t
r
t
f
V
GE
= 15 V
T
J
= 175°C
I
C
= 75 A
Rg = 10 W
t
d(off)
t
d(on)
t
r
t
f
550
2.5
Figure 18. Safe Operating Area
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
1K100101
0.1
100
1000
I
C
, COLLECTOR CURRENT (A)
10K600
10
1
50 ms
100 ms
1 ms
dc operation
Single Nonrepetitive
Pulse T
C
= 25°C
Curves must be derated
linearly with increase
in temperature
3.0
0.5
FGH75T65SQDNL4
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6
TYPICAL CHARACTERISTICS
Figure 19. Reverse Bias Safe Operating Area Figure 20. t
rr
vs. di
F
/dt
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
di
F
/dt, DIODE CURRENT SLOPE (A/ms)
1K100101
1
10
100
1000
900700 1300500300100
50
70
Figure 21. Q
rr
vs. di
F
/dt Figure 22. I
rm
vs. di
F
/dt
di
F
/dt, DIODE CURRENT SLOPE (A/ms) di
F
/dt, DIODE CURRENT SLOPE (A/ms)
900 1300700500300100
0
900700300100
0
20
40
50
Figure 23. V
F
vs. T
J
T
J
, JUNCTION TEMPERATURE (°C)
1007550250−25−50−75
0.60
1.40
I
C
, COLLECTOR CURRENT (A)
t
rr
, REVERSE RECOVERY TIME (ns)
Q
rr
, REVERSE RECOVERY CHARGE (mC)
I
rm
, REVERSE RECOVERY CURRENT (A)
V
F
, FORWARD VOLTAGE (V)
90
500 1300
150
110
30
200
V
GE
= 15 V, T
C
= 175°C
T
J
= 25°C, I
F
= 75 A
T
J
= 175°C, I
F
= 75 A
T
J
= 25°C, I
F
= 75 A
T
J
= 175°C, I
F
= 75 A
T
J
= 25°C, I
F
= 75 A
T
J
= 175°C, I
F
= 75 A
1.0
2.5
2.0
I
F
= 75 A
I
F
= 50 A
I
F
= 25 A
1.00
125 175
1.80
2.20
V
R
= 400 V
V
R
= 400 V
V
R
= 400 V
1100
130
150
1100
0.5
1100
3.0
1.5
10
0.80
1.60
1.20
2.00
P1-P3P4-P6P7-P9P10-P10

FGH75T65SQDNL4

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Buy FGH75T65SQDNL4
Manufacturer:
ON Semiconductor
Description:
IGBT Transistors 650V/75 FAST IGBT
Lifecycle:
New from this manufacturer.
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