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FGH75T65SQDNL4

P1-P3P4-P6P7-P9P10-P10
FGH75T65SQDNL4
www.onsemi.com
7
TYPICAL CHARACTERISTICS
Figure 24. IGBT Transient Thermal Impedance
PULSE TIME (sec)
R(t), SQUARE−WAVE PEAK (°C/W)
Figure 25. Diode Transient Thermal Impedance
PULSE TIME (sec)
50% Duty Cycle
20%
10%
5%
2%
Single Pulse
50% Duty Cycle
20%
10%
5%
2%
Single Pulse
0.0001
0.01
0.1
1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1
R
q
JC
= 0.28
0.001
0.1
1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1
R
q
JC
= 0.62
Junction
Case
C
1
C
2
R
1
R
2
R
n
Duty Factor = t
1
/t
2
Peak T
J
= P
DM
x Z
q
JC
+ T
C
C
n
C
i
(J/W)
0.0033
0.0172
0.0392
0.0590
0.0886
0.7735
R
i
(°C/W)
0.0301
0.0184
0.0255
0.0536
0.1129
0.0409
0.001
R(t), SQUARE−WAVE PEAK (°C/W)
Junction
Case
C
1
C
2
R
1
R
2
R
n
Duty Factor = t
1
/t
2
Peak T
J
= P
DM
x Z
q
JC
+ T
C
C
n
C
i
(J/W)
0.000125
0.000951
0.002753
0.003765
0.006647
0.009699
R
i
(°C/W)
0.007994
0.010512
0.011485
0.026558
0.047571
0.103104
0.051480
0.152673
0.234748
0.654533
0.061427
0.065499
0.134709
0.152781
0.01
Figure 26. Test Circuit for Switching Characteristics
FGH75T65SQDNL4
www.onsemi.com
8
Figure 27. Definition of Turn On Waveform
FGH75T65SQDNL4
www.onsemi.com
9
Figure 28. Definition of Turn Off Waveform
P1-P3P4-P6P7-P9P10-P10

FGH75T65SQDNL4

Mfr. #:
Buy FGH75T65SQDNL4
Manufacturer:
ON Semiconductor
Description:
IGBT Transistors 650V/75 FAST IGBT
Lifecycle:
New from this manufacturer.
Delivery:
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