
REV. 0
ADG3249
–3–
ABSOLUTE MAXIMUM RATINGS*
(T
A
= 25°C, unless otherwise noted.)
V
CC
to GND . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to +4.6 V
Digital Inputs to GND . . . . . . . . . . . . . . . . . –0.5 V to +4.6 V
DC Input Voltage . . . . . . . . . . . . . . . . . . . . . –0.5 V to +4.6 V
DC Output Current . . . . . . . . . . . . . . . . . 25 mA per Channel
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . . –40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . – 65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C
JA
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . 206°C/W
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . . . 300°C
IR Reflow, Peak Temperature (<20 sec) . . . . . . . . . . . . 235°C
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.
PIN CONFIGURATION
8-Lead SOT-23
TOP VIEW
(Not to Scale)
8
7
6
5
1
2
3
4
ADG3249
GND
A1
EN
IN
SEL
V
CC
A0
B
ORDERING GUIDE
Model Temperature Range Package Description Package Branding
ADG3249BRJ-R2 –40°C to +85°CSOT-23 (Small Outline Transistor Package) RJ-8 SHA
ADG3249BRJ-REEL –40°C to +85°CSOT-23 (Small Outline Transistor Package) RJ-8 SHA
ADG3249BRJ-REEL7 –40°C to +85°CSOT-23 (Small Outline Transistor Package) RJ-8 SHA
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
ADG3249 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.
Table II. Truth Table
EN IN SEL* FUNCTION
HXX Disconnect
LLLA0 = B; 3.3 V to 1.8 V Level Shifting
LLHA0 = B; 3.3 V to 2.5 V/2.5 V to 1.8 V Level Shifting
LHLA1 = B; 3.3 V to 1.8 V Level Shifting
LHHA1 = B; 3.3 V to 2.5 V/2.5 V to 1.8 V Level Shifting
*SEL = 0 V only when V
DD
= 3.3 V 10%
Table I. Pin Function Descriptions
Pin No. Mnemonic Description
1 EN Enable (Active Low)
2A0 Port A0, Input or Output
3A1 Port A1, Input or Output
4 GND Ground Reference
5B Port B, Input or Output
6INChannel Select
7 SEL Level Translation Select
8V
CC
Positive Power Supply Voltage