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FDM606P

P1-P3P4-P6P7-P9P10-P12
©2004 Fairchild Semiconductor Corporation
December 2004
FDM606P Rev. D2
FDM606P
FDM606P
P-Channel 1.8V Logic Level Power Trench
®
MOSFET
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimize the on-state resistance
and yet maintain low gate charge for superior switching
performance. These devices are well suited for portable
electronics applications.
Applications
• Load switch
• Battery charge
• Battery disconnect circuits
Features
• Fast switching
•r
DS(ON)
= 0.026Ω (Typ), V
GS
= -4.5V
•r
DS(ON)
= 0.033Ω (Typ), V
GS
= -2.5V
•r
DS(ON)
= 0.052Ω (Typ), V
GS
= -1.8V
MOSFET Maximum Ratings T
A
=25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DSS
Drain to Source Voltage -20 V
V
GS
Gate to Source Voltage ±8V
I
D
Drain Current
-6.8 A
Continuous (T
C
= 25
o
C, V
GS
= - 4.5V)
Continuous (T
C
= 100
o
C, V
GS
= - 2.5V) -3.8 A
Continuous (T
C
= 100
o
C, V
GS
= -1.8V) -3.0 A
Pulsed Figure 4
P
D
Power dissipation
Derate above 25°C
1.92
15.4
W
mW/
o
C
T
J
, T
STG
Operating and Storage Temperature -55 to 150
o
C
R
θJC
Thermal Resistance Junction to Case (Note1) 6.0
o
C/W
R
θJA
Thermal Resistance Junction to Ambient (Note 2) 65
o
C/W
R
θJA
Thermal Resistance Junction to Ambient (Note 3) 208
o
C/W
Device Marking Device Package Reel Size Tape Width Quantity
.06P FDM606P MicroFET3x2 178 mm 8 mm 3000
1
D
S
1
MicroFET 3x2-8
1
2
3
4
8
7
6
5
1
1
©2004 Fairchild Semiconductor Corporation FDM606P Rev. D2
FDM606P
Electrical Characteristics T
A
= 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
(V
GS
= -4.5V)
Drain-Source Diode Characteristics
Notes:
1. R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the center drain pad. R
θJC
is guaranteed by design while R
θCA
is determined by user’s board design.
2. R
θJA
is 65
o
C/W (steady state) when mounted on a 1 inch
2
copper pad on FR-4.
3. R
θJA
is 208
o
C/W (steady state) when mounted on a minimum pad area.
Symbol Parameter Test Conditions Min Typ Max Units
B
VDSS
Drain to Source Breakdown Voltage I
D
= -250µA, V
GS
= 0V -20 - - V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= -16V
V
GS
= 0V
- - -1
µA
T
A
= 100
o
C - - - 5
I
GSS
Gate to Source Leakage Current V
GS
= ±8V - - ±100 nA
V
GS(TH)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= -250µA -0.4 -0.9 -1.5 V
r
DS(ON)
Drain to Source On Resistance
I
D
= -6.8A, V
GS
= -4.5V - 0.026 0.030
ΩI
D
= -3.8A, V
GS
= -2.5V - 0.033 0.038
I
D
= -3.0A, V
GS
= -1.8V - 0.052 0.070
C
ISS
Input Capacitance
V
DS
= -10V, V
GS
= 0V,
f = 1MHz
- 2200 - pF
C
OSS
Output Capacitance - 350 - pF
C
RSS
Reverse Transfer Capacitance - 160 - pF
Q
g(TOT)
Total Gate Charge at -4.5V V
GS
= 0V to -4.5V
V
DD
= -10V
I
D
= -3.0A
I
g
= 1.0mA
-2030nC
Q
g(-2.5)
Total Gate Charge at -2.5V V
GS
= 0V to -2.5V - 12 18 nC
Q
gs
Gate to Source Gate Charge - 3.0 - nC
Q
gd
Gate to Drain “Miller” Charge - 3.8 - nC
t
ON
Turn-On Time
V
DD
= -10V, I
D
= -3.0A
V
GS
= -4.5V, R
GS
= 6.8Ω
- - 81 ns
t
d(ON)
Turn-On Delay Time - 9 - ns
t
r
Rise Time - 46 - ns
t
d(OFF)
Turn-Off Delay Time - 134 - ns
t
f
Fall Time - 71 - ns
t
OFF
Turn-Off Time - - 308 ns
V
SD
Source to Drain Diode Voltage I
SD
= -6.8A - -0.9 -1.2 V
t
rr
Reverse Recovery Time I
SD
= -3.0A, dI
SD
/dt = 100A/µs- -28ns
Q
RR
Reverse Recovered Charge I
SD
= -3.0A, dI
SD
/dt = 100A/µs- -20nC
©2004 Fairchild Semiconductor Corporation FDM606P Rev. D2
FDM606P
Typical Characteristic T
A
= 25°C unless otherwise noted
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 3. Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
T
A
, AMBIENT TEMPERATURE (
o
C)
POWER DISSIPATION MULTIPLIER
0
0255075100 150
0.2
0.4
0.6
0.8
1.0
1.2
125
0
2
4
6
8
25 50 75 100 125 150
-I
D
, DRAIN CURRENT (A)
T
A
, CASE TEMPERATURE (
o
C)
V
GS
= -4.5V
V
GS
= -2.5V
0.01
0.1
1
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
-5
2
t, RECTANGULAR PULSE DURATION (s)
Z
θJA
, NORMALIZED
THERMAL IMPEDANCE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJA
x R
θJA
+ T
A
P
DM
t
1
t
2
0.5
0.2
0.1
0.05
0.01
0.02
DUTY CYCLE - DESCENDING ORDER
10
100
200
5
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
3
10
2
-I
DM
, PEAK CURRENT (A)
t, PULSE WIDTH (s)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= -2.5V
T
A
= 25
o
C
I = I
25
150 - T
A
125
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= -4.5V
P1-P3P4-P6P7-P9P10-P12

FDM606P

Mfr. #:
Buy FDM606P
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET P-Ch Power Trench Logic Level 1.8V
Lifecycle:
New from this manufacturer.
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