©2004 Fairchild Semiconductor Corporation FDM606P Rev. D2
FDM606P
Figure 5. Transfer Characteristics Figure 6. Saturation Characteristics
Figure 7. Drain to Source On Resistance vs Gate
Voltage and Drain Current
Figure 8. Normalized Drain to Source On
Resistance vs Junction Temperature
Figure 9. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 10. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Typical Characteristic (Continued) T
A
= 25°C unless otherwise noted
0
4
8
12
16
20
1.0 1.5 2.0 2.5
-I
D
, DRAIN CURRENT (A)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
4
8
12
16
20
00.51.01.52.0
-I
D
, DRAIN CURRENT (A)
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= -2.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
= -2V
T
A
= 25
o
C
V
GS
= -4.5V
V
GS
= -1.8V
20
30
40
50
123456
60
I
D
= -1A
-V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= -6.8A
r
DS(ON)
, DRAIN TO SOURCE
ON RESISTANCE (mΩ)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0.75
1.00
1.25
1.50
-80 -40 0 40 80 120 160
NORMALIZED DRAIN TO SOURCE
T
J
, JUNCTION TEMPERATURE (
o
C)
ON RESISTANCE
V
GS
= -4.5V, I
D
= -6.8A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0.50
0.75
1.00
1.25
-80 -40 0 40 80 120 160
NORMALIZED GATE
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250µA
THRESHOLD VOLTAGE
0.90
0.95
1.00
1.05
1.10
-80 -40 0 40 80 120 160
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN TO SOURCE
I
D
= 250µA
BREAKDOWN VOLTAGE
