Philips Semiconductors
PHP/PHB/PHD14NQ20T
TrenchMOS™ standard level FET
Product data Rev. 03 — 11 March 2002 2 of 14
9397 750 09535
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
3. Limiting values
Table 2: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage (DC) T
j
=25to175
o
C - 200 V
V
DGR
drain-gate voltage (DC) T
j
=25to175
o
C; R
GS
=20kΩ - 200 V
V
GS
gate-source voltage - ±20 V
I
D
drain current (DC) V
GS
=10V;Figure 2 and 3
T
mb
=25°C - 14 A
T
mb
= 100 °C - 10 A
I
DM
peak drain current T
mb
=25°C; pulsed; t
p
≤ 10 µs;
Figure 3
-56A
P
tot
total power dissipation T
mb
=25°C; Figure 1 - 125 W
T
stg
storage temperature −55 +175 °C
T
j
operating junction temperature −55 +175 °C
Source-drain diode
I
S
source (diode forward) current (DC) T
mb
=25°C - 14 A
I
SM
peak source (diode forward) current T
mb
=25°C; pulsed; t
p
≤ 10 µs - 56 A
Avalanche ruggedness
E
DS(ALS)
non-repetitive avalanche energy unclamped inductive load; I
D
=14A;
t
p
=20µs; V
DD
≤ 25 V; R
GS
=50Ω;
V
GS
= 10 V; starting T
j
=25°C;
Figure 15
-70mJ
I
DS(ALM)
peak non-repetitive avalanche current - 14 A
