PHD14NQ20T,118 Datasheet PHD14NQ20T,118, PHP14NQ20T,127 | P4-P6

Philips Semiconductors

PHP/PHB/PHD14NQ20T

TrenchMOS™ standard level FET

Product data Rev. 03 — 11 March 2002 4 of 14

9397 750 09535

4. Thermal characteristics

4.1 Transient thermal impedance

Table 3: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-mb)

thermal resistance from junction to mounting

base

Figure 4 - - 1.2 K/W

R

th(j-a)

thermal resistance from junction to ambient vertical in still air; SOT78 package - 60 - K/W

SOT404 and SOT428 packages;

SOT404 minimum footprint; mounted on

a PCB

- 50 - K/W

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.

10

1

10

-1

10

-2

Z

th (j-mb)

(K/W)

11010

-1

10

-2

10

-3

10

-4

10

-5

10

-6

t

p

(s)

t

p

t

p

T

P

t

T

δ

=

δ = 0.5

δ = 0.2

δ = 0.1

δ = 0.02

δ = 0.05

single pulse

003aaa220

Philips Semiconductors

PHP/PHB/PHD14NQ20T

TrenchMOS™ standard level FET

Product data Rev. 03 — 11 March 2002 5 of 14

9397 750 09535

5. Characteristics

Table 4: Characteristics

T

j

=25

°

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

drain-source breakdown voltage I

D

= 250 µA; V

GS

=0V

T

j

=25°C 200 - - V

T

j

= −55 °C 178 - - V

V

GS(th)

gate-source threshold voltage I

D

= 1 mA; V

DS

=V

GS

;

Figure 9

T

j

=25°C234V

T

j

= 175 °C1--V

T

j

= −55 °C--6V

I

DSS

drain-source leakage current V

DS

= 200 V; V

GS

=0V

T

j

=25°C - 0.05 10 µA

T

j

= 175 °C - - 500 µA

I

GSS

gate-source leakage current V

GS

= ±10 V; V

DS

= 0 V - 10 100 nA

R

DSon

drain-source on-state resistance V

GS

= 10 V; I

D

=7A;

Figure 7 and 8

T

j

=25°C - 150 230 mΩ

T

j

= 175 °C - - 633 mΩ

Dynamic characteristics

g

fs

forward transconductance V

DS

=25V; I

D

=7A;

Figure 14

6 12.1 - S

Q

g(tot)

total gate charge I

D

= 14 A; V

DD

= 160 V;

V

GS

=10V;Figure 13

-38-nC

Q

gs

gate-source charge - 4 - nC

Q

gd

gate-drain (Miller) charge - 13.3 - nC

C

iss

input capacitance V

GS

=0V; V

DS

= 25V;

f = 1 MHz; Figure 11

- 1500 - pF

C

oss

output capacitance - 128 - pF

C

rss

reverse transfer capacitance - 60 - pF

t

d(on)

turn-on delay time V

DD

=30V; R

D

=10Ω;

V

GS

= 10 V; R

GS

=50Ω;

R

gen

=50Ω

-25-ns

t

r

rise time - 40 - ns

t

d(off)

turn-off delay time - 83 - ns

t

f

fall time - 31 - ns

Source-drain diode

V

SD

source-drain (diode forward)

voltage

I

S

= 14 A; V

GS

=0V;

Figure 12

- 1.0 1.5 V

t

rr

reverse recovery time I

S

=14A;

dI

S

/dt = −100 A/µs;

V

GS

=0V; V

R

=30V

- 135 - ns

Q

r

recovered charge - 690 - nC

Philips Semiconductors

PHP/PHB/PHD14NQ20T

TrenchMOS™ standard level FET

Product data Rev. 03 — 11 March 2002 6 of 14

9397 750 09535

T

j

=25°CT

j

=25°C and 175 °C; V

DS

> I

D

× R

DSon

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values.

Fig 6. Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

T

j

=25°C

Fig 7. Drain-source on-state resistance as a function

of drain current; typical values.

Fig 8. Normalized drain source on-state resistance

factor as a function of junction temperature.

6 V

5 V

V

GS

= 10 V

5.5 V

4.5 V

30

20

10

0

I

D

(A)

1086420

V

DS

(V)

003aaa221

8

16

24

0

30

0

2

4

6

8

I

D

(A)

T

j

= 25

ο

C

T

j

= 175

ο

C

V

GS

(V)

003aaa223

20010515

I

D

(A)

R

DSon

(Ω)

0.8

0.6

0.4

0.2

0

V

GS

= 10 V

6 V

4.5 V

5 V

5.5 V

003aaa222

180

-60

1

1.5

2

2.5

3

0.5

20

100

a

T

j

(

ο

C)

003aaa225

a

R

DSon

R

DSon 25°C()

------------------------------

=

PHD14NQ20T,118

PHD14NQ20T,118

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