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PHD14NQ20T,118
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
Philips Semiconductors
PHP/PHB/PHD14NQ20T
T
renchMOS™ standard level FET
Product data
Rev
. 03 — 11 Marc
h 2002
7 of 14
9397 750 09535
© Koninklijk
e Philips Electronics N.V
. 2002. All r
ights reserved.
I
D
= 1 mA; V
DS
=V
GS
T
j
=2
5
°
C; V
DS
=5V
Fig 9.
Gate-source threshold v
oltage as a function of
junction temperature.
Fig 10.
Sub-threshold drain current as a function of
gate-source v
oltage.
V
GS
= 0 V
; f = 1 MHz
T
j
=2
5
°
C and 175
°
C; V
GS
=0V
Fig 11.
Input,
output and
reverse
transfer
capacitances
as a function of drain-source v
oltage; typical
values.
Fig 12.
Source (diode f
orward) current as a function of
source-drain (diode f
orward) v
oltage; typical
values.
003aaa226
5
4
3
2
1
0
0
100
200
-100
T
j
(
ο
C)
V
GS(th)
(V)
max
typ
min
03aa35
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
0246
V
GS
(V)
I
D
(A)
max
typ
min
10
10
2
10
3
10
4
C
(pF)
V
DS
(V)
01
0
2
0
3
0
4
0
C
iss
C
rss
C
oss
003aaa227
1.2
0
0.4
0.8
30
20
10
0
I
S
(A)
V
SD
(V)
T
j
= 175
ο
C
T
j
= 25
ο
C
003aaa229
Philips Semiconductors
PHP/PHB/PHD14NQ20T
T
renchMOS™ standard level FET
Product data
Rev
. 03 — 11 Marc
h 2002
8 of 14
9397 750 09535
© Koninklijk
e Philips Electronics N.V
. 2002. All r
ights reserved.
I
D
= 15 A; V
DD
= 40 V
and 160 V
V
DS
=2
5V
Fig 13.
Gate-source v
oltage as a function of gate
charge; typical v
alues.
Fig 14.
Forward transconductance as a function of
drain current; typical values.
12
8
4
0
04
0
10
20
30
Q
G
(nC)
V
GS
(V)
V
DD
= 40
V
V
DD
= 160
V
003aaa228
20
12
0
4
8
16
03
0
10
20
g
fs
(S)
I
D
(A)
003aaa224
Unclamped inductive load; V
DD
≤
25 V; R
GS
=5
0
Ω
; V
GS
= 10 V
; star
ting T
j
=2
5
°
C and 150
°
C
Fig 15.
Non-repetitive av
alanche ruggedness current as a function of pulse duration; typical values.
003aaa230
10
1
10
-1
10
2
I
AS
(A)
11
0
10
-1
10
-2
10
-3
t
p
(ms)
25
ο
C
T
j
prior to avalanche = 150
ο
C
Philips Semiconductors
PHP/PHB/PHD14NQ20T
T
renchMOS™ standard level FET
Product data
Rev
. 03 — 11 Marc
h 2002
9 of 14
9397 750 09535
© Koninklijk
e Philips Electronics N.V
. 2002. All r
ights reserved.
6.
P
ac
kage outline
Fig 16.
SO
T78 (T
O-220AB).
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT78
SC-46
3-lead TO-220AB
D
D
1
q
p
L
12
3
L
1
(1)
b
1
e
e
b
0
5
10 mm
scale
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
DIMENSIONS (mm are the original dimensions)
A
E
A
1
c
Note
1. Terminals in this zone are not tinned.
Q
L
2
UNIT
A
1
b
1
D
1
e
p
mm
2.54
qQ
A
b
D
c
L
2
max.
3.0
3.8
3.6
15.0
13.5
3.30
2.79
3.0
2.7
2.6
2.2
0.7
0.4
15.8
15.2
0.9
0.7
1.3
1.0
4.5
4.1
1.39
1.27
6.4
5.9
10.3
9.7
L
1
(1)
E
L
00-09-07
01-02-16
mounting
base
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
PHD14NQ20T,118
Mfr. #:
Buy PHD14NQ20T,118
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 200V 14A DPAK
Lifecycle:
New from this manufacturer.
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