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ML610Q438P-NNNTC0AGL

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P36
FEDL610Q439-3
LAPIS Semiconductor
ML610Q438/ML610Q439
22/36
OPERATING CONDITIONS OF FLASH ROM
(V
SS
= AV
SS
= 0V)
Parameter Symbol Condition Range Unit
Operating temperature
T
OP
At write/erase 0 to +40 C
V
DD
At write/erase
*1
2.75 to 3.6
V
DDL
At write/erase
*1
2.5 to 2.75
Operating voltage
V
PP
At write/erase
*1
7.7 to 8.3
V
Write cycles
C
EP
 80 cycles
Data retention
Y
DR
 10
years
*1
: In addition the power supply to VDD pin and VPP pin, within the range 2.5V to 2.75V has to be supplied to VDDL
pin when programming and eraseing Flash ROM.
DC CHARACTERISTICS (1/5)
(V
DD
= 1.1 to 3.6V, AV
DD
= 2.2 to 3.6V, V
SS
= AV
SS
= 0V, Ta = 20 to +70C, Ta = 40 to +85C for P version,unless otherwise
specified ) (1/5)
Rating
Parameter Symbol Condition
Min. Typ. Max.
Unit
Measuring
circuit
Ta = 25C
Typ.
10%
500
Typ.
10%
kHz
500kHz RC oscillation frequency
f
RC
V
DD
=
1.3 to
3.6V
Ta = 20 to
+70C
Typ.
25%
500
Typ.
25%
kHz
PLL oscillation frequency*
4
f
PLL
LSCLK = 32.768kHz
V
DD
= 1.8 to 3.6V
-2.5% 8.192 +2.5% MHz
Low-speed crystal oscillation
start time*
2
T
XTL
  0.3 2 s
500kHz RC oscillation start time
T
RC
  50 500 s
High-speed crystal oscillation
start time*
3
T
XTH
V
DD
= 1.8 to 3.6V ― 2 20
PLL oscillation start time
T
PLL
V
DD
= 1.8 to 3.6V ― 1 10
Low-speed oscillation stop detect
time
*1
T
STOP
 0.2 3 20
ms
Reset pulse width
P
RST
 200  
Reset noise elimination
pulse width
P
NRST
   0.3
s
Power-on reset activation
power rise time
T
POR
   10 ms
1
*1: When low-speed crystal oscillation stops for a duration more than the low-speed oscillation stop detect time, the system is
reset to shift to system reset mode.
*
2
: Use 32.768KHz Crystal Resonator DT-26 (Load capacitance 6pF) (KDS: DAISHINKU CORP.)
*
3
: Use 4.096MHz Crystal Oscillator CHC49SFWB (Kyocera).
*
4
: 1024 clock average.
RESET
RESET_N
RESET_N pin reset
VDD
0.9xV
DD
0.1xV
DD
T
POR
Power on reset
P
RST
VIL1 VIL1
FEDL610Q439-3
LAPIS Semiconductor
ML610Q438/ML610Q439
23/36
DC CHARACTERISTICS (2/5)
(V
DD
= 1.1 to 3.6V, AV
DD
= 2.2 to 3.6V, V
SS
= AV
SS
= 0V, Ta = 20 to +70C, Ta = 40 to +85C for P version, unless otherwise
specified) (2/5)
Rating
Parameter Symbol Condition
Min. Typ. Max.
Unit
Measuring
circuit
CN4–0 = 00H 0.89 0.94 0.99
CN4–0 = 01H 0.91 0.96 1.01
CN4–0 = 02H 0.93 0.98 1.03
CN4–0 = 03H 0.95 1.00 1.05
CN4–0 = 04H 0.97 1.02 1.07
CN4–0 = 05H 0.99 1.04 1.09
CN4–0 = 06H 1.01 1.06 1.11
CN4–0 = 07H 1.03 1.08 1.13
CN4–0 = 08H 1.05 1.10 1.15
CN4–0 = 09H 1.07 1.12 1.17
CN4–0 = 0AH 1.09 1.14 1.19
CN4–0 = 0BH 1.11 1.16 1.21
CN4–0 = 0CH 1.13 1.18 1.23
CN4–0 = 0DH 1.15 1.20 1.25
CN4–0 = 0EH 1.17 1.22 1.27
CN4–0 = 0FH 1.19 1.24 1.29
CN4–0 = 10H 1.21 1.26 1.31
CN4–0 = 11H 1.23 1.28 1.33
CN4–0 = 12H 1.25 1.30 1.35
CN4–0 = 13H 1.27 1.32 1.37
CN4–0 = 14H
*1
1.29 1.34 1.39
CN4–0 = 15H
*1
1.31 1.36 1.41
CN4–0 = 16H
*1
1.33 1.38 1.43
CN4–0 = 17H
*1
1.35 1.40 1.45
CN4–0 = 18H
*1
1.37 1.42 1.47
CN4–0 = 19H
*1
1.39 1.44 1.49
CN4–0 = 1AH
*1
1.41 1.46 1.51
CN4–0 = 1BH
*1
1.43 1.48 1.53
CN4–0 = 1CH
*1
1.45 1.50 1.55
CN4–0 = 1DH
*1
1.47 1.52 1.57
CN4–0 = 1EH
*1
1.49 1.54 1.59
V
L1
voltage
V
L1
V
DD
= 3.0V,
Tj = 25C
CN4–0 = 1FH
*1
1.51 1.56 1.61
V
V
L1
temperature
deviation
V
L1
V
DD
= 3.0V
 mV/C
V
L1
voltage
dependency
V
L1
V
DD
= 1.3 to 3.6V  5 20 mV/V
V
L2
voltage
V
L2
V
DD
= 3.0V, Tj = 25C
300k load (V
L4
V
SS
)
Typ.
%
V
L1
2
Typ.
+4%
1/3 bias V
L1
2
V
L3
voltage
V
L3
1/4 bias
Typ.
10%
V
L1
3
Typ.
+4%
1/3 bias V
L1
3
V
L4
voltage
V
L4
V
DD
= 3.0V,
Tj = 25C
300k load
(V
L4
V
SS
)
1/4 bias
Typ.
10%
V
L1
4
Typ.
+5%
V
LCD bias voltage
generation time
T
BIAS
   600 ms
1
*1: When using 1/4 bias, the V
L1
voltage is set to typ. 1.32 V (same voltage as in CN4–0 = 13H).
FEDL610Q439-3
LAPIS Semiconductor
ML610Q438/ML610Q439
24/36
DC CHARACTERISTICS (3/5)
(V
DD
= 1.1 to 3.6V, AV
DD
= 2.2 to 3.6V, V
SS
= AV
SS
= 0V, Ta = 20 to +70C, Ta = 40 to +85C for P version,unless otherwise
specified) (3/5)
Rating
Parameter Symbol Condition
Min. Typ. Max.
Unit
Measuring
circuit
LD2–0 = 0H 1.35
LD2–0 = 1H 1.4
LD2–0 = 2H 1.45
LD2–0 = 3H 1.5
LD2–0 = 4H 1.6
LD2–0 = 5H 1.7
LD2–0 = 6H 1.8
LD2–0 = 7H 1.9
LD2–0 = 8H 2.0
LD2–0 = 9H 2.1
LD2–0 = 0AH 2.2
LD2–0 = 0BH 2.3
LD2–0 = 0CH 2.4
LD2–0 = 0DH 2.5
LD2–0 = 0EH 2.7
BLD
threshold
voltage
V
BLD
V
DD
= 1.35 to 3.6V
LD2–0 = 0FH
Typ.
2%
2.9
Typ.
+2%
V
BLD
threshold
voltage
temperature
deviation
V
BLD
V
DD
= 1.35 to 3.6V 
0
%/C
Ta =
25C
 0.15 0.50
Supply current
1
IDD1
CPU: In STOP state.
Low-speed/high-speed oscillation:
stopped.
Ta = -20
to +70C
 2.50
A
Ta =
25C
 0.5 1.3
Supply current
2
IDD2
CPU: In HALT state (LTBC, RTC:
Operating*
3
*
5
).
High-speed oscillation: Stopped.
LCD/BIAS circuits: Stopped.
Ta = -20
to +70C
 3.5
A
Ta =
25C
 5 7
Supply current
3
IDD3
CPU: In 32.768kHz operating state.*
1
*
3
High-speed oscillation: Stopped.
LCD/BIAS circuits: Operating.*
2
Ta = -20
to +70C
 12
A
Ta =
25C
 70 85
Supply current
4
IDD4
CPU: In 500kHz CR operating state.
LCD/BIAS circuits: Operating.*
2
*
3
Ta = -20
to +70C
 100
A
1
Ta =
25C
 0.8 1.0
Supply current
5
IDD5
CPU: In 4.096MHz operating state.
PLL: In oscillating state.
LCD/BIAS circuits: Operating. *
2
*
3
V
DD
= 1.8 to 3.6V
Ta = -20
to +70C
 1.2
mA
*
1
: CPU operating rate is 100% (No HALT state).
*
2
: All SEGs: off waveform, No LCD panel load, 1/3 bias, 1/3 duty, Frame frequency: Approx. 64 Hz,
Bias voltage multiplying clock: 1/128 LSCLK (256Hz)
*
3
: Use 32.768KHz Crystal Resonator DT-26 (Load capacitance 6pF) (KDS: DAISHINKU CORP.)
*
4
: Use 4.096MHz Crystal Oscillator CHC49SFWB (Kyocera).
*
5
: Significant bits of BLKCON0~BLKCON4 registers are all “1”.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P36

ML610Q438P-NNNTC0AGL

Mfr. #:
Buy ML610Q438P-NNNTC0AGL
Manufacturer:
ROHM Semiconductor
Description:
8-bit Microcontrollers - MCU RECOMMENDED ALT 755-10Q438PNNNTC0AAL
Lifecycle:
New from this manufacturer.
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