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FSBB20CH60BT

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
4 www.fairchildsemi.com
FSBB20CH60B Rev. C
FSBB20CH60B Smart Power Module
Internal Equivalent Circuit and Input/Output Pins
Note:
1. Inverter low-side is composed of three IGBTs, freewheeling diodes for each IGBT and one control IC. It has gate drive and protection functions.
2. Inverter power side is composed of four inverter dc-link input terminals and three inverter output terminals.
3. Inverter high-side is composed of three IGBTs, freewheeling diodes and three drive ICs for each IGBT.
Figure 3.
COM
VCC
IN(UL)
IN(VL)
IN(WL)
VFO
C(FOD)
C(SC)
OUT(UL)
OUT(VL)
OUT(WL)
N
U
(21)
N
V
(22)
N
W
(23)
U (24)
V (25)
W (26)
P (27)
(20) V
S(W)
(19) V
B(W)
(16) V
S(V)
(15) V
B(V)
(8) C
SC
(7) C
FOD
(6) V
FO
(5) IN
(WL)
(4) IN
(VL)
(3) IN
(UL)
(2) COM
(1) V
CC(L)
VCC
VB
OUT
COM
VS
IN
VB
VS
OUT
IN
COM
VCC
VCC
VB
OUT
COM
VS
IN
(18) V
CC(H)
(17) IN
(WH)
(14) V
CC(H)
(13) IN
(VH)
(12) V
S(U)
(11) V
B(U)
(10) V
CC(H)
(9) IN
(UH)
V
SL
5 www.fairchildsemi.com
FSBB20CH60B Rev. C
FSBB20CH60B Smart Power Module
Absolute Maximum Ratings (T
J
= 25°C, Unless Otherwise Specified)
Inverter Part
Note:
1. The maximum junction temperature rating of the power chips integrated within the SPM is 150°C(@T
C
≤ 125°C).
Control Part
Bootstrap Diode Part
Total System
Thermal Resistance
Note:
2. For the measurement point of case temperature(T
C
), please refer to Figure 2.
Symbol Parameter Conditions Rating Units
V
PN
Supply Voltage Applied between P- N
U
, N
V
, N
W
450 V
V
PN(Surge)
Supply Voltage (Surge) Applied between P- N
U
, N
V
, N
W
500 V
V
CES
Collector-emitter Voltage 600 V
± I
C
Each IGBT Collector Current T
C
= 25°C 20 A
± I
CP
Each IGBT Collector Current (Peak) T
C
= 25°C, Under 1ms Pulse Width 40 A
P
C
Collector Dissipation T
C
= 25°C per One Chip 62 W
T
J
Operating Junction Temperature (Note 1) -40 ~ 150 °C
Symbol Parameter Conditions Rating Units
V
CC
Control Supply Voltage Applied between V
CC(H)
, V
CC(L)
- COM 20 V
V
BS
High-side Control Bias
Voltage
Applied between V
B(U)
- V
S(U)
, V
B(V)
- V
S(V)
,
V
B(W)
- V
S(W)
20 V
V
IN
Input Signal Voltage Applied between IN
(UH)
, IN
(VH)
, IN
(WH)
,
IN
(UL)
, IN
(VL)
, IN
(WL)
- COM
-0.3~17 V
V
FO
Fault Output Supply Voltage Applied between V
FO
- COM -0.3~V
CC
+0.3 V
I
FO
Fault Output Current Sink Current at V
FO
Pin 5 mA
V
SC
Current Sensing Input Voltage Applied between C
SC
- COM -0.3~V
CC
+0.3 V
Symbol Parameter Conditions Rating Units
V
RRM
Maximum Repetitive Reverse Voltage 600 V
I
F
Forward Current T
C
= 25°C 0.5 A
I
FP
Forward Current (Peak) T
C
= 25°C, Under 1ms Pulse Width 2 A
T
J
Operating Junction Temperature -40 ~ 150 °C
Symbol Parameter Conditions Rating Units
V
PN(PROT)
Self Protection Supply Voltage Limit
(Short Circuit Protection Capability)
V
CC
= V
BS
= 13.5 ~ 16.5V
T
J
= 150°C, Non-repetitive, less than 2μs
400 V
T
C
Module Case Operation Temperature -40°C≤ T
J
≤ 150°C, See Figure 2 -40 ~ 125 °C
T
STG
Storage Temperature -40 ~ 150 °C
V
ISO
Isolation Voltage 60Hz, Sinusoidal, AC 1 minute, Connection
Pins to heat sink plate
2500 V
rms
Symbol Parameter Conditions Min. Typ. Max. Units
R
th(j-c)Q
Junction to Case Thermal
Resistance
Inverter IGBT part (per 1/6 module) - - 2.0 °C/W
R
th(j-c)F
Inverter FWD part (per 1/6 module) - - 3.0 °C/W
6 www.fairchildsemi.com
FSBB20CH60B Rev. C
FSBB20CH60B Smart Power Module
Electrical Characteristics (T
J
= 25°C, Unless Otherwise Specified)
Inverter Part
Note:
3. t
ON
and t
OFF
include the propagation delay time of the internal drive IC. t
C(ON)
and t
C(OFF)
are the switching time of IGBT itself under the given gate driving condition internally.
For the detailed information, please see Figure 4.
Control Part
Note:
4. Short-circuit current protection is functioning only at the low-sides.
5. The fault-out pulse width t
FOD
depends on the capacitance value of C
FOD
according to the following approximate equation : C
FOD
= 18.3 x 10
-6
x t
FOD
[F]
Symbol Parameter Conditions Min. Typ. Max. Units
V
CE(SAT)
Collector-Emitter Saturation
Voltage
V
CC
= V
BS
= 15V
V
IN
= 5V
I
C
= 20A, T
J
= 25°C - - 2.0 V
V
F
FWD Forward Voltage V
IN
= 0V I
F
= 20A, T
J
= 25°C - - 2.2 V
HS t
ON
Switching Times V
PN
= 300V, V
CC
= V
BS
= 15V
I
C
= 20A
V
IN
= 0V ↔ 5V, Inductive Load
(Note 3)
-0.80- μs
t
C(ON)
-0.20- μs
t
OFF
-0.75- μs
t
C(OFF)
-0.15- μs
t
rr
-0.10- μs
LS t
ON
V
PN
= 300V, V
CC
= V
BS
= 15V
I
C
= 20A
V
IN
= 0V ↔ 5V, Inductive Load
(Note 3)
-0.55- μs
t
C(ON)
-0.30- μs
t
OFF
-0.70- μs
t
C(OFF)
-0.15- μs
t
rr
-0.10- μs
I
CES
Collector-Emitter
Leakage Current
V
CE
= V
CES
--1mA
Symbol Parameter Conditions Min. Typ. Max. Units
I
QCCL
Quiescent V
CC
Supply
Current
V
CC
= 15V
IN
(UL, VL, WL)
= 0V
V
CC(L)
- COM - - 23 mA
I
QCCH
V
CC
= 15V
IN
(UH, VH, WH)
= 0V
V
CC(H)
- COM - - 600 μA
I
QBS
Quiescent V
BS
Supply
Current
V
BS
= 15V
IN
(UH, VH, WH)
= 0V
V
B(U)
- V
S(U)
, V
B(V)
-V
S(V)
,
V
B(W)
- V
S(W)
- - 500 μA
V
FOH
Fault Output Voltage V
SC
= 0V, V
FO
Circuit: 4.7kΩ to 5V Pull-up 4.5 - - V
V
FOL
V
SC
= 1V, V
FO
Circuit: 4.7kΩ to 5V Pull-up - - 0.8 V
V
SC(ref)
Short Circuit Trip Level V
CC
= 15V (Note 4) 0.45 0.5 0.55 V
TSD Over-temperature protec-
tion
Temperature at LVIC - 160 - °C
ΔTSD Over-temperature protec-
tion hysterisis
Temperature at LVIC - 5 - °C
UV
CCD
Supply Circuit Under-
Voltage Protection
Detection Level 10.7 11.9 13.0 V
UV
CCR
Reset Level 11.2 12.4 13.4 V
UV
BSD
Detection Level 10 11 12 V
UV
BSR
Reset Level 10.5 11.5 12.5 V
t
FOD
Fault-out Pulse Width C
FOD
= 33nF (Note 5) 1.0 1.8 - ms
V
IN(ON)
ON Threshold Voltage Applied between IN
(UH)
, IN
(VH)
, IN
(WH)
, IN
(UL)
,
IN
(VL)
, IN
(WL)
- COM
2.8 - - V
V
IN(OFF)
OFF Threshold Voltage - - 0.8 V
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

FSBB20CH60BT

Mfr. #:
Buy FSBB20CH60BT
Manufacturer:
ON Semiconductor / Fairchild
Description:
Motor / Motion / Ignition Controllers & Drivers 600V -20A 3-phase
Lifecycle:
New from this manufacturer.
Delivery:
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