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FSBB20CH60B Rev. C
FSBB20CH60B Smart Power Module
Bootstrap Diode Part
Note:
6. Built in bootstrap diode includes around 15Ω resistance characteristic.
Figure 6. Built in Bootstrap Diode Characteristics
Recommended Operating Conditions
Symbol Parameter Conditions Min. Typ. Max. Units
V
F
Forward Voltage I
F
= 0.1A, T
C
= 25°C - 2.5 - V
t
rr
Reverse Recovery Time I
F
= 0.1A, T
C
= 25°C - 80 - ns
Symbol Parameter Conditions
Value
Units
Min. Typ. Max.
V
PN
Supply Voltage Applied between P - N
U
, N
V
, N
W
- 300 400 V
V
CC
Control Supply Voltage Applied between V
CC(H)
, V
CC(L)
- COM 13.5 15 16.5 V
V
BS
High-side Bias Voltage Applied between V
B(U)
- V
S(U)
, V
B(V)
- V
S(V)
,
V
B(W)
- V
S(W)
13.0 15 18.5 V
dV
CC
/dt,
dV
BS
/dt
Control supply variation -1 - 1 V/
μs
t
dead
Blanking Time for Preventing
Arm-short
For Each Input Signal 2.0 - - μs
f
PWM
PWM Input Signal -40°C ≤ T
C
≤ 125°C, -40°C ≤ T
J
≤ 150°C - - 20 kHz
V
SEN
Voltage for Current Sensing Applied between N
U
, N
V
, N
W
- COM
(Including surge voltage)
-4 4 V
0123456789101112131415
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Built in Bootstrap Diode V
F
-I
F
Characteristic
T
C
=25℃
I
F
[A]
V
F
[V]
