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FGH60T65SQD-F155

P1-P3P4-P6P7-P9P10-P10
© Semiconductor Components Industries, LLC, 2017
February, 2018 − Rev. 2
1 Publication Order Number:
FGH60T65SQD−F155/D
FGH60T65SQD-F155
Field Stop Trench IGBT
650 V, 60 A
Description
Using novel field stop IGBT technology, ON semiconductor’s new
series of field stop 4
th
generation IGBTs offer the optimum
performance for solar inverter, UPS, welder, telecom, ESS and PFC
applications where low conduction and switching losses are essential.
Features
• Max Junction Temperature 175°C
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: V
CE(sat)
= 1.6 V (Typ.) @ I
C
= 60 A
• 100% of the Parts Tested for ILM(1)
• High Input Impedance
• Fast Switching
• Tighten Parameter Distribution
• This Device is Pb−Free and is RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, Telecom, ESS, PFC
TO−247−3LD
CASE 340CH
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
www.onsemi.com
V
CES
I
C
650 V 60 A
MARKING DIAGRAM
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
FGH60T65SQD = Specific Device Code
$Y&Z&3&K
FGH60T65
SQD
COLLECTOR
(FLANGE)
E
C
G
E
C
G
FGH60T65SQD−F155
www.onsemi.com
2
ABSOLUTE MAXIMUM RATINGS
Symbol Description FGH60T65SQD−F155 Unit
V
CES
Collector to Emitter Voltage 650 V
V
GES
Gate to Emitter Voltage ±20 V
Transient Gate to Emitter Voltage ±30 V
I
C
Collector Current
@ TC < 25°C 120
A
@ TC < 100°C 60
I
LM
(Note 1)
Pulsed Collector Current @ TC < 25°C 240 A
I
CM
(Note 2)
Pulsed Collector Current 240 A
I
F
Diode Forward Current @ TC < 25°C 60 A
Diode Forward Current @ TC < 100°C 30 A
I
FM
(Note 2)
Repetitive Forward Surge Current 240 A
P
D
Maximum Power Dissipation
@ TC < 25°C 333 W
@ TC < 100°C 167 W
T
J
Operating Junction Temperature Range −55 to +175 °C
T
STG
Storage Temperature Range −55 to +175 °C
T
L
Maximum Lead Temp. For soldering Purposes, 18” from case for 5 sec 300 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. V
CC
= 400 V, V
GE
= 15 V, I
C
= 240 A, R
G
= 21 W, Inductive Load.
2. Repetitive rating: Pulse width limited by max. junction temperature.
THERMAL CHARACTERISTICS
Symbol Parameter FGH60T65SQD−F155 Unit
R
q
JC
(IGBT)
Thermal Resistance, Junction to Case, Max. 0.45
_C/W
R
q
JC
(Diode)
Thermal Resistance, Junction to Case, Max. 1.25
_C/W
R
q
JA
Thermal Resistance, Junction to Ambient, Max. 40
_C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FGH60T65SQD−F155 FGH60T65SQD TO−247−3LD Tube − − 30
FGH60T65SQD−F155
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS OF THE IGBT (T
C
= 25°C unless otherwise noted)
Symbol
Parameter Test Conditions Min Typ Max Unit
OFF CHARACTERISTICS
BV
CES
Collector to Emitter Breakdown Voltage V
GE
= 0 V, I
C
= 1 mA 650 − − V
DBV
CES
/ DT
J
Temperature Coefficient of Breakdown Voltage I
C
= 1 mA, Reference to 25°C − 0.6 − V/°C
I
CES
Collector Cut−Off Current V
CE
= V
CES
, V
GE
= 0 V − − 250
mA
I
GES
G−E Leakage Current V
GE
= V
GES
, V
CE
= 0 V − − ±400 nA
ON CHARACTERISTICS
V
GE(th)
G−E Threshold Voltage I
C
= 60 mA, V
CE
= V
GE
2.6 4.5 6.4 V
V
CE(sat)
Collector to Emitter Saturation Voltage
I
C
= 60 A
,
V
GE
= 15 V − 1.6 2.1 V
I
C
= 60 A
,
V
GE
= 15 V,
T
C
= 175°C
− 1.92 −
V
DYNAMIC CHARACTERISTICS
C
ies
Input Capacitance
V
CE
= 30 V
,
V
GE
= 0 V,
f = 1MHz
− 3813 − pF
C
oes
Output Capacitance − 90 − pF
C
res
Reverse Transfer Capacitance − 13 − pF
SWITCHING CHARACTERISTICS
t
d(on)
Turn−On Delay Time
V
CC
= 400 V, I
C
= 15 A,
R
G
= 4.7 W, V
GE
= 15 V,
Inductive Load, T
C
= 25°C
− 20.8 − ns
t
r
Rise Time − 8 − ns
t
d(off)
Turn−Off Delay Time − 102 − ns
t
f
Fall Time − 11.2 − ns
E
on
Turn−On Switching Loss − 227 −
mJ
E
off
Turn−Off Switching Loss − 100 −
mJ
E
ts
Total Switching Loss − 327 −
mJ
t
d(on)
Turn−On Delay Time
V
CC
= 400 V, I
C
= 30 A,
R
G
= 4.7 W, V
GE
= 15 V,
Inductive Load, T
C
= 25°C
− 21.6 − ns
t
r
Rise Time − 14.4 − ns
t
d(off)
Turn−Off Delay Time − 97.6 − ns
t
f
Fall Time − 4.8 − ns
E
on
Turn−On Switching Loss − 585 −
mJ
E
off
Turn−Off Switching Loss − 167 −
mJ
E
ts
Total Switching Loss − 752 −
mJ
T
d(on)
Turn−On Delay Time
V
CC
= 400 V, I
C
= 15 A,
R
G
= 4.7 W, V
GE
= 15 V,
Inductive Load, T
C
= 175°C
− 19.2 − ns
T
r
Rise Time − 9.6 − ns
T
d(off)
Turn−Off Delay Time − 115 − ns
T
f
Fall Time − 11.2 − ns
E
on
Turn−On Switching Loss − 448 −
mJ
E
off
Turn−Off Switching Loss − 199 −
mJ
E
ts
Total Switching Loss − 647 −
mJ
P1-P3P4-P6P7-P9P10-P10

FGH60T65SQD-F155

Mfr. #:
Buy FGH60T65SQD-F155
Manufacturer:
ON Semiconductor
Description:
IGBT Transistors 650V 60A FS4 TRENCH
Lifecycle:
New from this manufacturer.
Delivery:
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