FGH60T65SQD−F155
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4
ELECTRICAL CHARACTERISTICS OF THE IGBT (T
C
= 25°C unless otherwise noted)
Symbol UnitMaxTypMinTest ConditionsParameter
SWITCHING CHARACTERISTICS
T
d(on)
Turn−On Delay Time
V
CC
= 400 V, I
C
= 30 A,
R
G
= 4.7 W, V
GE
= 15 V,
Inductive Load, T
C
= 175°C
− 20.8 − ns
T
r
Rise Time − 16 − ns
T
d(off)
Turn−Off Delay Time − 106 − ns
T
f
Fall Time − 8.8 − ns
E
on
Turn−On Switching Loss − 942 −
mJ
E
off
Turn−Off Switching Loss − 386 −
mJ
E
ts
Total Switching Loss − 1328 −
mJ
Q
g
Total Gate Charge
V
CE
= 400 V, I
C
= 60 A,
V
GE
= 15 V
− 79 − nC
Q
ge
Gate to Emitter Charge − 22 − nC
Q
gc
Gate to Collector Charge − 27 − nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ELECTRICAL CHARACTERISTICS OF THE DIODE (T
C
= 25°C unless otherwise noted)
Symbol Parameter Test Conditions Min Typ Max Unit
V
FM
Diode Forward Voltage
I
F
= 30 A
T
C
= 25°C
− 2.3 2.7
V
T
C
= 175°C
− 1.9 −
E
rec
Reverse Recovery Energy
I
F
= 30 A,
dI
F
/dt = 200 A/ms
T
C
= 175°C
− 50 −
mJ
T
rr
Diode Reverse Recovery Time
T
C
= 25°C
− 34.6 −
ns
T
C
= 175°C
− 197 −
Q
rr
Diode Reverse Recovery Charge
T
C
= 25°C
− 58.6 −
nC
T
C
= 175°C
− 810 −
