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FGH60T65SQD-F155

P1-P3P4-P6P7-P9P10-P10
FGH60T65SQD−F155
www.onsemi.com
7
TYPICAL CHARACTERISTICS (Continued)
Figure 13. Turn−off Characteristics vs.
Collector Current
Figure 14. Switching Loos vs.
Collector Current
Figure 15. Load Current vs. Frequency Figure 16. SOA Characteristics
Figure 17. Forward Characteristics
Collector Current, I
C
[A]
Figure 18. Reverse Recovery Current
Collector Current, I
C
[A]
Switching Frequency, f[Hz]
Forward Current, I
F
[A]
Forward Current, I
F
[A]
Collector Current, I
C
[A]
Collector−Emitter Voltage, V
CE
[V]
Forward Voltage, V
F
[V]
Switching Time [ns]
Switching Loos [mJ]
Collector Current [A]
Reverse Recovery Current, I
rr
[A]
0 25 50 75 100 125 150
1
10
100
500
t
d(off)
t
f
E
on
E
off
0
50
100
150
200
250
300
0.1
1
10
100
400
1 ms
10 ms
DC
10 ms
100
ms
1
10
100
180
1k 10k 100k 1M 1 10 100 1000
10000
1000
50
0 25 50 75 100 125 150
Common Emitter
V
GE
= 15 V, R
G
= 4.7 W
T
C
= 25°C
T
C
= 175°C
100
Common Emitter
V
GE
= 15 V, R
G
= 4.7 W
T
C
= 25°C
T
C
= 175°C
T
C
= 100°C
T
C
= 75°C
T
C
= 25°C
Square Wave
T
J
≤ 175°C, D = 0.5,
V
CE
= 400 V, V
GE
= 15/0 V, R
G
= 4.7 W
Notes:
1. T
C
= 25°C
2. T
J
= 175°C
3. Single Pulse
T
C
= 25°C
T
C
= 175°C
T
C
= 75°C
0123456
di/dt = 200 A/ms
di/dt = 100 A/ms
di/dt = 200 A/ms
di/dt = 100 A/ms
T
C
= 25°C
T
C
= 175°C
12
9
6
3
0
020406080
FGH60T65SQD−F155
www.onsemi.com
8
TYPICAL CHARACTERISTICS (Continued)
Figure 19. Reverse Recovery Time Figure 20. Stored Charge
Figure 21. Transient Thermal Impedance of IGBT
Forward Current, I
F
[A]
Figure 22. Transient Thermal Impedance of Diode
Forward Current, I
F
[A]
Reverse Recovery Time, t
rr
[ns]
Stored Recovery Charge, Q
rr
[nC]
0
100
200
300
400
10
−5
10
−4
10
−3
10
−2
10
−1
10
0
0.005
0.01
0.1
0.6
0.01
0.02
0.1
0.05
0.2
single pulse
Rectangular Pulse Duration [sec]
0.5
t
1
P
DM
t
2
10
−5
10
−4
10
−3
10
−2
10
−1
10
0
0.01
0.1
1
2
0.01
0.02
0.1
0.05
0.2
single pulse
Rectangular Pulse Duration [sec]
0.5
t
1
P
DM
t
2
Thermal Response [Z
THJC
]
Thermal Response [Z
THJC
]
T
C
= 25°C
T
C
= 175°C
di/dt = 200 A/ms di/dt = 100 A/ms
di/dt = 200 A/msdi/dt = 100 A/ms
T
C
= 25°C
T
C
= 175°C
020406080
Duty Factor, D = t1/t2
Peak T
J
= P
DM
× Z
THJC
+ T
C
Duty Factor, D = t1/t2
Peak T
J
= P
DM
× Z
THJC
+ T
C
1000
800
600
400
200
0
020406080
FGH60T65SQD−F155
www.onsemi.com
9
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CH
ISSUE O
P1-P3P4-P6P7-P9P10-P10

FGH60T65SQD-F155

Mfr. #:
Buy FGH60T65SQD-F155
Manufacturer:
ON Semiconductor
Description:
IGBT Transistors 650V 60A FS4 TRENCH
Lifecycle:
New from this manufacturer.
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