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BC847BDW1T1G

P1-P3P4-P6P7-P9P10-P11
© Semiconductor Components Industries, LLC, 2015
August, 2016 − Rev. 11
1 Publication Order Number:
BC846BDW1T1/D
BC846BDW1, BC847BDW1,
BC848CDW1
Dual General Purpose
Transistors
NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
Features
• S and NSV Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating Symbol BC846 BC847 BC848 Unit
Collector−Emitter Voltage V
CEO
65 45 30 V
Collector−Base Voltage V
CBO
80 50 30 V
Emitter−Base Voltage V
EBO
6.0 6.0 5.0 V
Collector Current −
Continuous
I
C
100 100 100 mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
Per Device
FR−5 Board (Note 1)
T
A
= 25°C
Derate Above 25°C
P
D
380
250
3.0
mW
mW
mW/°C
Thermal Resistance,
Junction to Ambient
R
q
JA
328
°C/W
Junction and Storage Temperature
Range
T
J
, T
stg
−55 to +150 °C
1. FR−5 = 1.0 x 0.75 x 0.062 in
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SOT−363/SC−88
CASE 419B
STYLE 1
MARKING DIAGRAM
Q
1
(1)(2)
(3)
(4) (5) (6)
Q
2
1x = Specific Device Code
x = B, F, G, L
M = Date Code
G = Pb−Free Package
www.onsemi.com
See detailed ordering and shipping information in the packag
e
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
(Note: Microdot may be in either location)
1x MG
G
1
6
BC846BDW1, BC847BDW1, BC848CDW1
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= 10 mA)
BC846
BC847
BC848
V
(BR)CEO
65
45
30
−
−
−
−
−
−
V
Collector−Emitter Breakdown Voltage
(I
C
= 10 mA, V
EB
= 0)
BC846
BC847
BC848
V
(BR)CES
80
50
30
−
−
−
−
−
−
V
Collector−Base Breakdown Voltage
(I
C
= 10 mA)
BC846
BC847
BC848
V
(BR)CBO
80
50
30
−
−
−
−
−
−
V
Emitter−Base Breakdown Voltage
(I
E
= 1.0 mA)
BC846
BC847
BC848
V
(BR)EBO
6.0
6.0
5.0
−
−
−
−
−
−
V
Collector Cutoff Current
(V
CB
= 30 V)
(V
CB
= 30 V, T
A
= 150°C)
I
CBO
−
−
−
−
15
5.0
nA
mA
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10 mA, V
CE
= 5.0 V)
BC846B, BC847B
BC847C, BC848C
(I
C
= 2.0 mA, V
CE
= 5.0 V)
BC846B, BC847B
BC847C, BC848C
h
FE
−
−
200
420
150
270
290
520
−
−
450
800
−
Collector−Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.5 mA)
(I
C
= 100 mA, I
B
= 5.0 mA)
V
CE(sat)
−
−
−
−
0.25
0.6
V
Base−Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.5 mA)
(I
C
= 100 mA, I
B
= 5.0 mA)
V
BE(sat)
−
−
0.7
0.9
−
−
V
Base−Emitter Voltage
(I
C
= 2.0 mA, V
CE
= 5.0 V)
(I
C
= 10 mA, V
CE
= 5.0 V)
V
BE(on)
580
−
660
−
700
770
mV
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 10 mA, V
CE
= 5.0 Vdc, f = 100 MHz)
f
T
100 − −
MHz
Output Capacitance
(V
CB
= 10 V, f = 1.0 MHz)
C
obo
− − 4.5
pF
Noise Figure
(I
C
= 0.2 mA, V
CE
= 5.0 Vdc, R
S
= 2.0 kW,f = 1.0 kHz, BW = 200 Hz)
NF
− − 10
dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
BC846BDW1, BC847BDW1, BC848CDW1
www.onsemi.com
3
TYPICAL CHARACTERISTICS − BC846BDW1
0
100
200
300
400
500
600
0.001 0.01 0.1 1
I
C
, COLLECTOR CURRENT (A)
h
FE
, DC CURRENT GAIN
Figure 1. DC Current Gain at V
CE
= 5 V
V
CE
= 5 V
150°C
25°C
−55°C
0
100
200
300
400
500
600
0.001 0.01 0.1
1
V
CE
= 10 V
150°C
25°C
−55°C
I
C
, COLLECTOR CURRENT (A)
h
FE
, DC CURRENT GAIN
Figure 2. DC Current Gain at V
CE
= 10 V
0.00
0.05
0.10
0.15
0.20
0.25
0.0001 0.001 0.01 0.1
V
CE(sat)
, COLL−EMITT SATURATION VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
Figure 3. V
CE(sat)
at I
C
/I
B
= 10
150°C
25°C
−55°C
I
C
/I
B
= 10
0
0.05
0.1
0.15
0.2
0.25
0.3
0.0001 0.001 0.01 0
.1
V
CE(sat)
, COLL−EMITT SATURATION VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
Figure 4. V
CE(sat)
at I
C
/I
B
= 20
I
C
/I
B
= 20
150°C
−55°C
25°C
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.10
0.0001 0.001 0.01 0.1
V
BE(sat)
, BASE−EMITT SATURATION VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
Figure 5. V
BE(sat)
at I
C
/I
B
= 10
I
C
/I
B
= 10
150°C
25°C
−55°C
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.10
0.0001 0.001 0.01 0
.1
V
BE(sat)
, BASE−EMITT SATURATION VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
Figure 6. V
BE(sat)
at I
C
/I
B
= 20
I
C
/I
B
= 20
150°C
25°C
−55°C
P1-P3P4-P6P7-P9P10-P11

BC847BDW1T1G

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Buy BC847BDW1T1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 100mA 50V Dual NPN
Lifecycle:
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